Myeong Cheol Shin - JoVE Visualize

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Materials (Basel, Switzerland)|February 5, 2021

Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature SensorsSeung-Woo Jung, Myeong-Cheol Shin, Michael A Schweitz, et al.

Materials (Basel, Switzerland)|January 23, 2020

High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD DevicesSeong-Ji Min, Myeong Cheol Shin, Ngoc Thi Nguyen, et al.

Journal of Nanoscience and Nanotechnology|November 25, 2018

Study on 3.3 kV Super Junction Field Stop Insulated Gate Bipolar Transistor According to Design and Process ParametersMyeong Cheol Shin, Hun-Suk Chung, Byung-Sub Ahn, et al.

Materials (Basel, Switzerland)|April 3, 2021

Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF SputterMyeong-Cheol Shin, Young-Jae Lee, Dong-Hyeon Kim, et al.

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Showing results (1-10 of 4) with videos related to

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Pageof 1

Materials (Basel, Switzerland)|February 5, 2021

Influence of Gas Annealing on Sensitivity of AlN/4H-Sic-Based Temperature SensorsSeung-Woo Jung, Myeong-Cheol Shin, Michael A Schweitz, et al.

Materials (Basel, Switzerland)|January 23, 2020

High-Performance Temperature Sensors Based on Dual 4H-SiC JBS and SBD DevicesSeong-Ji Min, Myeong Cheol Shin, Ngoc Thi Nguyen, et al.

Journal of Nanoscience and Nanotechnology|November 25, 2018

Study on 3.3 kV Super Junction Field Stop Insulated Gate Bipolar Transistor According to Design and Process ParametersMyeong Cheol Shin, Hun-Suk Chung, Byung-Sub Ahn, et al.

Materials (Basel, Switzerland)|April 3, 2021

Improved Electrical Characteristics of Gallium Oxide/P-Epi Silicon Carbide Static Induction Transistors with UV/Ozone Treatment Fabricated by RF SputterMyeong-Cheol Shin, Young-Jae Lee, Dong-Hyeon Kim, et al.

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