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N von den Driesch

Showing results (1-10 of 6) with videos related to

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Nanotechnology|June 21, 2018
Fabrication of comb-drive actuators for straining nanostructured suspended grapheneM Goldsche, G J Verbiest, T Khodkov, et al.
ACS Applied Materials & Interfaces|February 22, 2017
Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal StacksC Schulte-Braucks, K Narimani, S Glass, et al.
ACS Applied Materials & Interfaces|May 6, 2016
Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-AlloysC Schulte-Braucks, N von den Driesch, S Glass, et al.
The Review of Scientific Instruments|September 2, 2019
Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fieldsG J Verbiest, H Janssen, D Xu, et al.
Nano Letters|February 7, 2017
Growth and Optical Properties of Direct Band Gap Ge/Ge<sub>0.87</sub>Sn<sub>0.13</sub> Core/Shell Nanowire ArraysS Assali, A Dijkstra, A Li, et al.
Optics Express|February 3, 2016
Study of GeSn based heterostructures: towards optimized group IV MQW LEDsD Stange, N von den Driesch, D Rainko, et al.
Pageof 1

Showing results (1-10 of 6) with videos related to

Sort By:
Pageof 1
Nanotechnology|June 21, 2018
Fabrication of comb-drive actuators for straining nanostructured suspended grapheneM Goldsche, G J Verbiest, T Khodkov, et al.
ACS Applied Materials & Interfaces|February 22, 2017
Correlation of Bandgap Reduction with Inversion Response in (Si)GeSn/High-k/Metal StacksC Schulte-Braucks, K Narimani, S Glass, et al.
ACS Applied Materials & Interfaces|May 6, 2016
Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si)GeSn-AlloysC Schulte-Braucks, N von den Driesch, S Glass, et al.
The Review of Scientific Instruments|September 2, 2019
Integrated impedance bridge for absolute capacitance measurements at cryogenic temperatures and finite magnetic fieldsG J Verbiest, H Janssen, D Xu, et al.
Nano Letters|February 7, 2017
Growth and Optical Properties of Direct Band Gap Ge/Ge<sub>0.87</sub>Sn<sub>0.13</sub> Core/Shell Nanowire ArraysS Assali, A Dijkstra, A Li, et al.
Optics Express|February 3, 2016
Study of GeSn based heterostructures: towards optimized group IV MQW LEDsD Stange, N von den Driesch, D Rainko, et al.
Pageof 1