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Nanotechnology|October 14, 2011
Using post-breakdown conduction study in a MIS structure to better understand the resistive switching mechanism in an MIM stackXing Wu, Kin-Leong Pey, Nagarajan Raghavan, et al.
Advanced Science (Weinheim, Baden-Wurttemberg, Germany)|June 26, 2018
Atomic Scale Modulation of Self-Rectifying Resistive Switching by Interfacial DefectsXing Wu, Kaihao Yu, Dongkyu Cha, et al.
ACS Applied Materials & Interfaces|September 4, 2025
Microscopic Analysis of Degradation and Breakdown Kinetics in HfO2 Gate Dielectric after Ions IrradiationAndrea Padovani, Paolo La Torraca, Fernando L Aguirre, et al.
Science Bulletin|January 20, 2023
Fast response CdS-CdSxTe1-x-CdTe core-shell nanobelt photodetectorMingwei Tang, Pengfei Xu, Zhong Wen, et al.
Nanomaterials (Basel, Switzerland)|February 15, 2022
Crystallographic Anisotropy Dependence of Interfacial Sliding Phenomenon in a Cu(16)/Nb(16) ARB (Accumulated Rolling Bonding) NanolaminateRahul Sahay, Arief S Budiman, Izzat Aziz, et al.
Nanomaterials (Basel, Switzerland)|October 15, 2025
Interface Rotation in Accumulative Rolling Bonding (ARB) Cu/Nb Nanolaminates Under Constrained and Unconstrained Loading Conditions as Revealed by In Situ Micromechanical TestingRahul Sahay, Ihor Radchenko, Pavithra Ananthasubramanian, et al.
ACS Nano|August 10, 2019
Fiber-Integrated Reversibly Wavelength-Tunable Nanowire Laser Based on Nanocavity Mode CouplingMing-Hua Zhuge, Zongyin Yang, Jianpei Zhang, et al.
Nature Communications|March 4, 2024
Hardware implementation of memristor-based artificial neural networksFernando Aguirre, Abu Sebastian, Manuel Le Gallo, et al.
ACS Nano|November 3, 2021
Standards for the Characterization of Endurance in Resistive Switching DevicesMario Lanza, Rainer Waser, Daniele Ielmini, et al.
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