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ACS Nano|June 26, 2024
Nonvolatile Control of Valley Polarized Emission in 2D WSe2-AlScN HeterostructuresSimrjit Singh, Kwan-Ho Kim, Kiyoung Jo, et al.
ACS Nano|February 26, 2025
High Current and Carrier Densities in 2D MoS2/AlScN Field-Effect Transistors via Ferroelectric Gating and Ohmic ContactsSeunguk Song, Kwan-Ho Kim, Rachael Keneipp, et al.
ACS Nano|January 15, 2021
Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on SapphireMikhail Chubarov, Tanushree H Choudhury, Danielle Reifsnyder Hickey, et al.
ACS Nano|January 25, 2024
Tuning Polarity in WSe2/AlScN FeFETs via Contact EngineeringKwan-Ho Kim, Seunguk Song, Bumho Kim, et al.
Nature|January 10, 2024
Three-dimensional integration of two-dimensional field-effect transistorsDarsith Jayachandran, Rahul Pendurthi, Muhtasim Ul Karim Sadaf, et al.
Nature Materials|November 18, 2022
Active pixel sensor matrix based on monolayer MoS2 phototransistor arrayAkhil Dodda, Darsith Jayachandran, Andrew Pannone, et al.
ACS Nano|May 27, 2022
High-Density, Localized Quantum Emitters in Strained 2D SemiconductorsGwangwoo Kim, Hyong Min Kim, Pawan Kumar, et al.
Nature Nanotechnology|May 22, 2023
Scalable CMOS back-end-of-line-compatible AlScN/two-dimensional channel ferroelectric field-effect transistorsKwan-Ho Kim, Seyong Oh, Merrilyn Mercy Adzo Fiagbenu, et al.
Nature Nanotechnology|July 27, 2023
Step engineering for nucleation and domain orientation control in WSe2 epitaxy on c-plane sapphireHaoyue Zhu, Nadire Nayir, Tanushree H Choudhury, et al.
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