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Optics Express|November 11, 2025
Strain-engineered vertical emitting InGaAsSb quantum well lasers at 2-2.4 µm: in-well vs. barrier pumping, silicate bonding, and thermal optimizationMaximilian C Schuchter, Nicolas Huwyler, Matthias Golling, et al.
Optics Express|April 12, 2025
Composition-controlled recovery time of SWIR (2-2.4 µm) GaSb-based SESAMsMaximilian C Schuchter, Marco Gaulke, Nicolas Huwyler, et al.
Optics Express|January 4, 2024
Gigahertz semiconductor laser at a center wavelength of 2 µm in single and dual-comb operationMarco Gaulke, Jonas Heidrich, Nicolas Huwyler, et al.
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