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Omling

Showing results (1-10 of 48) with videos related to

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Physical Review. B, Condensed Matter|September 15, 1991
Spin-dependent interdefect change transfer in the GaP:(Mn,S) systemOmling, Meyer
Physical Review. B, Condensed Matter|October 15, 1986
Properties of the EL2 level in GaAs1-xPxSamuelson, Omling
Physical Review. B, Condensed Matter|September 15, 1996
Spin-resonance determination of the electron effective g value of In0.53Ga0.47AsKowalski, Linke, Omling
Physical Review. B, Condensed Matter|June 15, 1993
Electron effective mass in direct-band-gap GaAs1-xPx alloysWetzel, Meyer, Omling
Physical Review. B, Condensed Matter|August 15, 1988
Identification of a second energy level of EL2 in n-type GaAsOmling, Silverberg, Samuelson
Physical Review Letters|October 6, 2000
Strong, ultranarrow peaks of longitudinal and hall resistances in the regime of breakdown of the quantum hall effectSong, Omling
Physical Review. B, Condensed Matter|March 15, 1993
Electron-paramagnetic-resonance investigation of the iron-indium pair in siliconGehlhoff, Emanuelsson, Omling, et al.
Physical Review. B, Condensed Matter|March 15, 1991
Optically detected magnetic resonance of dislocations in siliconKveder, Omling, Grimmeiss, et al.
Physical Review. B, Condensed Matter|April 15, 1990
Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in siliconGehlhoff, Emanuelsson, Omling, et al.
Physical Review. B, Condensed Matter|April 15, 1986
Antisite-related defects in plastically deformed GaAsOmling, Weber, Samuelson
Pageof 5

Showing results (1-10 of 48) with videos related to

Sort By:
Pageof 5
Physical Review. B, Condensed Matter|September 15, 1991
Spin-dependent interdefect change transfer in the GaP:(Mn,S) systemOmling, Meyer
Physical Review. B, Condensed Matter|October 15, 1986
Properties of the EL2 level in GaAs1-xPxSamuelson, Omling
Physical Review. B, Condensed Matter|September 15, 1996
Spin-resonance determination of the electron effective g value of In0.53Ga0.47AsKowalski, Linke, Omling
Physical Review. B, Condensed Matter|June 15, 1993
Electron effective mass in direct-band-gap GaAs1-xPx alloysWetzel, Meyer, Omling
Physical Review. B, Condensed Matter|August 15, 1988
Identification of a second energy level of EL2 in n-type GaAsOmling, Silverberg, Samuelson
Physical Review Letters|October 6, 2000
Strong, ultranarrow peaks of longitudinal and hall resistances in the regime of breakdown of the quantum hall effectSong, Omling
Physical Review. B, Condensed Matter|March 15, 1993
Electron-paramagnetic-resonance investigation of the iron-indium pair in siliconGehlhoff, Emanuelsson, Omling, et al.
Physical Review. B, Condensed Matter|March 15, 1991
Optically detected magnetic resonance of dislocations in siliconKveder, Omling, Grimmeiss, et al.
Physical Review. B, Condensed Matter|April 15, 1990
Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in siliconGehlhoff, Emanuelsson, Omling, et al.
Physical Review. B, Condensed Matter|April 15, 1986
Antisite-related defects in plastically deformed GaAsOmling, Weber, Samuelson
Pageof 5