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Peter Kleinschmidt

Showing results (1-10 of 21) with videos related to

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Mayo Clinic Proceedings. Digital Health|April 10, 2025
Catecholamine Surge in the Emergency Department: A Tech-Knowledgy-Preventable Pheochromocytoma CrisisSamantha Pabich, Peter Kleinschmidt, Joseph Halfpap, et al.
Research Square|May 19, 2023
CancelRx Case Study: Implications for Clinic and Community Pharmacy Work SystemsTaylor L Watterson, Jamie A Stone, Peter Kleinschmidt, et al.
ACS Omega|February 12, 2024
Impact of the Tip-to-Semiconductor Contact in the Electrical Characterization of NanowiresJuliane Koch, Lisa Liborius, Peter Kleinschmidt, et al.
WMJ : Official Publication of the State Medical Society of Wisconsin|April 30, 2020
MRSA Septicemia With Septic Arthritis and Prostatic, Intraretinal, Periapical, and Lung AbscessesRyan A Denu, Deval Patel, Benjamin J Becker, et al.
ACS Applied Materials & Interfaces|September 19, 2024
Tracking Charge Carrier Paths in Freestanding GaN/AlN Nanowires on Si(111)Juliane Koch, Patrick Häuser, Peter Kleinschmidt, et al.
Nanoscale Research Letters|December 31, 2018
Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMHMatthias Steidl, Mingjian Wu, Katharina Peh, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|July 18, 2017
Comparative analysis on resistance profiling along tapered semiconductor nanowires: multi-tip technique versus transmission line methodAndreas Nägelein, Lisa Liborius, Matthias Steidl, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|December 8, 2018
Charge transport in GaAs nanowires: interplay between conductivity through the interior and surface conductivityStefan Korte, Andreas Nägelein, Matthias Steidl, et al.
Nanotechnology|December 8, 2018
MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structureMatthias Steidl, Klaus Schwarzburg, Beatriz Galiana, et al.
ACS Applied Materials & Interfaces|April 21, 2015
Formation of GaP/Si(100) Heterointerfaces in the Presence of Inherent Reactor ResidualsOliver Supplie, Matthias M May, Christian Höhn, et al.
Pageof 3

Showing results (1-10 of 21) with videos related to

Sort By:
Pageof 3
Mayo Clinic Proceedings. Digital Health|April 10, 2025
Catecholamine Surge in the Emergency Department: A Tech-Knowledgy-Preventable Pheochromocytoma CrisisSamantha Pabich, Peter Kleinschmidt, Joseph Halfpap, et al.
Research Square|May 19, 2023
CancelRx Case Study: Implications for Clinic and Community Pharmacy Work SystemsTaylor L Watterson, Jamie A Stone, Peter Kleinschmidt, et al.
ACS Omega|February 12, 2024
Impact of the Tip-to-Semiconductor Contact in the Electrical Characterization of NanowiresJuliane Koch, Lisa Liborius, Peter Kleinschmidt, et al.
WMJ : Official Publication of the State Medical Society of Wisconsin|April 30, 2020
MRSA Septicemia With Septic Arthritis and Prostatic, Intraretinal, Periapical, and Lung AbscessesRyan A Denu, Deval Patel, Benjamin J Becker, et al.
ACS Applied Materials & Interfaces|September 19, 2024
Tracking Charge Carrier Paths in Freestanding GaN/AlN Nanowires on Si(111)Juliane Koch, Patrick Häuser, Peter Kleinschmidt, et al.
Nanoscale Research Letters|December 31, 2018
Impact of N Incorporation on VLS Growth of GaP(N) Nanowires Utilizing UDMHMatthias Steidl, Mingjian Wu, Katharina Peh, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|July 18, 2017
Comparative analysis on resistance profiling along tapered semiconductor nanowires: multi-tip technique versus transmission line methodAndreas Nägelein, Lisa Liborius, Matthias Steidl, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|December 8, 2018
Charge transport in GaAs nanowires: interplay between conductivity through the interior and surface conductivityStefan Korte, Andreas Nägelein, Matthias Steidl, et al.
Nanotechnology|December 8, 2018
MOVPE growth of GaP/GaPN core-shell nanowires: N incorporation, morphology and crystal structureMatthias Steidl, Klaus Schwarzburg, Beatriz Galiana, et al.
ACS Applied Materials & Interfaces|April 21, 2015
Formation of GaP/Si(100) Heterointerfaces in the Presence of Inherent Reactor ResidualsOliver Supplie, Matthias M May, Christian Höhn, et al.
Pageof 3