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Journal of Applied Crystallography|April 7, 2015
High-resolution characterization of the forbidden Si 200 and Si 222 reflectionsPeter ZaumseilJournal Der Deutschen Dermatologischen Gesellschaft = Journal of the German Society of Dermatology : JDDG|November 12, 2005
[Azelaic acid 15% gel in the treatment of acne vulgaris. Combined results of two double-blind clinical comparative studies]Harald P M Gollnick, Klaus Graupe, Rolf-Peter ZaumseilJournal of Applied Crystallography|September 19, 2013
X-ray characterization of Ge dots epitaxially grown on nanostructured Si islands on silicon-on-insulator substratesPeter Zaumseil, Grzegorz Kozlowski, Yuji Yamamoto, et al.Scientific Reports|June 18, 2016
Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer depositionGang Niu, Hee-Dong Kim, Robin Roelofs, et al.Nanotechnology|October 7, 2017
A self-ordered, body-centered tetragonal superlattice of SiGe nanodot growth by reduced pressure CVDYuji Yamamoto, Peter Zaumseil, Giovanni Capellini, et al.ACS Applied Materials & Interfaces|March 15, 2014
Engineering of the chemical reactivity of the Ti/HfO₂ interface for RRAM: experiment and theoryPauline Calka, Malgorzata Sowinska, Thomas Bertaud, et al.ACS Applied Materials & Interfaces|November 7, 2015
Structural Mapping of Functional Ge Layers Grown on Graded SiGe Buffers for sub-10 nm CMOS Applications Using Advanced X-ray NanodiffractionMarie-Ingrid Richard, Marvin H Zoellner, Gilbert A Chahine, et al.ACS Applied Materials & Interfaces|September 8, 2016
Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si PillarsOliver Skibitzki, Giovanni Capellini, Yuji Yamamoto, et al.Nanotechnology|February 28, 2017
Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPEOliver Skibitzki, Ivan Prieto, Roksolana Kozak, et al.ACS Applied Materials & Interfaces|September 26, 2014
Oxygen vacancy induced room temperature ferromagnetism in Pr-doped CeO2 thin films on siliconGang Niu, Erwin Hildebrandt, Markus Andreas Schubert, et al.Pageof 2