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Philippe Regreny

Showing results (1-10 of 18) with videos related to

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Nanoscale|October 5, 2021
Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoringAli Jaffal, Philippe Regreny, Gilles Patriarche, et al.
Nanoscale Advances|September 22, 2022
Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)Marco Vettori, Alexandre Danescu, Xin Guan, et al.
Nanotechnology|October 21, 2022
Growing self-assisted GaAs nanowires up to 80<i>μ</i>m long by molecular beam epitaxyJeanne Becdelievre, Xin Guan, I Dudko, et al.
Optics Express|July 1, 2014
Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change materialNurrul Syafawati Binti Humam, Yu Sato, Motoki Takahashi, et al.
Optics Express|August 13, 2025
Regular combs of modes in compact cavities based on slow-light dispersion engineering in active III-V planar photonic crystalsMalik Kemiche, Jérémy Lhuillier, Aziz Benamrouche, et al.
Optics Express|March 4, 2011
Milliwatt-level fiber-coupled laser power from photonic crystal band-edge laserSunghwan Kim, Sungmo Ahn, Jeongkug Lee, et al.
Optics Express|April 1, 2009
Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 microm using cavity-confined slow lightFrédéric Bordas, Christian Seassal, Emmanuel Dupuy, et al.
Optics Express|November 24, 2011
10 Gbit/s all-optical NRZ-OOK to RZ-OOK format conversion in an ultra-small III-V-on-silicon microdisk fabricated in a CMOS pilot lineRajesh Kumar, Thijs Spuesens, Pauline Mechet, et al.
Nanoscale|March 17, 2025
Atomic force microscopy as a multimetrological platform for energy devicesHüsnü Aslan, Khaled Kaja, José Morán-Meza, et al.
Optics Express|June 17, 2009
Room-temperature InAs/InP Quantum Dots laser operation based on heterogeneous "2.5 D" Photonic CrystalBadhise Ben Bakir, Christian Seassal, Xavier Letartre, et al.
Pageof 2

Showing results (1-10 of 18) with videos related to

Sort By:
Pageof 2
Nanoscale|October 5, 2021
Highly linear polarized emission at telecom bands in InAs/InP quantum dot-nanowires by geometry tailoringAli Jaffal, Philippe Regreny, Gilles Patriarche, et al.
Nanoscale Advances|September 22, 2022
Impact of the Ga flux incidence angle on the growth kinetics of self-assisted GaAs nanowires on Si(111)Marco Vettori, Alexandre Danescu, Xin Guan, et al.
Nanotechnology|October 21, 2022
Growing self-assisted GaAs nanowires up to 80<i>μ</i>m long by molecular beam epitaxyJeanne Becdelievre, Xin Guan, I Dudko, et al.
Optics Express|July 1, 2014
Redshifted and blueshifted photoluminescence emission of InAs/InP quantum dots upon amorphization of phase change materialNurrul Syafawati Binti Humam, Yu Sato, Motoki Takahashi, et al.
Optics Express|August 13, 2025
Regular combs of modes in compact cavities based on slow-light dispersion engineering in active III-V planar photonic crystalsMalik Kemiche, Jérémy Lhuillier, Aziz Benamrouche, et al.
Optics Express|March 4, 2011
Milliwatt-level fiber-coupled laser power from photonic crystal band-edge laserSunghwan Kim, Sungmo Ahn, Jeongkug Lee, et al.
Optics Express|April 1, 2009
Room temperature low-threshold InAs/InP quantum dot single mode photonic crystal microlasers at 1.5 microm using cavity-confined slow lightFrédéric Bordas, Christian Seassal, Emmanuel Dupuy, et al.
Optics Express|November 24, 2011
10 Gbit/s all-optical NRZ-OOK to RZ-OOK format conversion in an ultra-small III-V-on-silicon microdisk fabricated in a CMOS pilot lineRajesh Kumar, Thijs Spuesens, Pauline Mechet, et al.
Nanoscale|March 17, 2025
Atomic force microscopy as a multimetrological platform for energy devicesHüsnü Aslan, Khaled Kaja, José Morán-Meza, et al.
Optics Express|June 17, 2009
Room-temperature InAs/InP Quantum Dots laser operation based on heterogeneous "2.5 D" Photonic CrystalBadhise Ben Bakir, Christian Seassal, Xavier Letartre, et al.
Pageof 2