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Sensors (Basel, Switzerland)|February 24, 2024
Theoretical Analysis of GeSn Quantum Dots for Photodetection ApplicationsPin-Hao Lin, Soumava Ghosh, Guo-En ChangSensors (Basel, Switzerland)|June 10, 2022
Design and Optimization of GeSn Waveguide Photodetectors for 2-µm Band Silicon PhotonicsSoumava Ghosh, Radhika Bansal, Greg Sun, et al.Sensors (Basel, Switzerland)|September 9, 2023
Dark Current Analysis on GeSn <i>p-i-n</i> PhotodetectorsSoumava Ghosh, Greg Sun, Timothy A Morgan, et al.Optics Letters|March 1, 2024
High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic-photonic integrated circuits at telecommunication wavelengthsTzu-Yang Huang, Radhika Bansal, Soumava Ghosh, et al.Optics Express|August 6, 2020
Resonant-cavity-enhanced responsivity in germanium-on-insulator photodetectorsSoumava Ghosh, Kuan-Chih Lin, Cheng-Hsun Tsai, et al.Micromachines|August 26, 2020
Metal-Semiconductor-Metal GeSn Photodetectors on Silicon for Short-Wave Infrared ApplicationsSoumava Ghosh, Kuan-Chih Lin, Cheng-Hsun Tsai, et al.Optics Express|September 29, 2020
Low-cost planar waveguide-based optofluidic sensor for real-time refractive index sensingDevesh Barshilia, Lai-Kwan Chau, Guo-En ChangSensors (Basel, Switzerland)|September 9, 2023
"GeSn Rule-23"-The Performance Limit of GeSn Infrared PhotodiodesGuo-En Chang, Shui-Qing Yu, Greg SunOptics Express|August 10, 2016
Tensile-strained Ge/SiGe quantum-well photodetectors on silicon substrates with extended infrared responseGuo-En Chang, Shao-Wei Chen, H H ChengOptics Express|July 8, 2009
Theory for n-type doped, tensile-strained Ge-Si(x)Ge(y)Sn1-x-y quantum-well lasers at telecom wavelengthGuo-En Chang, Shu-Wei Chang, Shun Lien ChuangPageof 5