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Ploog

Showing results (191-200 of 386) with videos related to

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Physical Review Letters|October 6, 2000
Reentrant mound formation in GaAs(001) homoepitaxy observed by ex situ atomic force microscopyApostolopoulos, Herfort, Daweritz, et al.
Physical Review. B, Condensed Matter|June 15, 1990
Observation of high-index excitonic states in AlxGa1-xAs/AlAs ternary-alloy quantum wells by two-photon spectroscopyCatalano, Cingolani, Lepore, et al.
Physical Review. B, Condensed Matter|January 15, 1995
Hall effect over integral filling factors in GaAs/AlxGa1-xAs quantum wiresMani, von Klitzing K, Ploog
Physical Review. B, Condensed Matter|July 15, 1995
Optical properties of (311)-oriented GaAs/AlAs superlatticesSantos, Cantarero, Cardona, et al.
Physical Review. B, Condensed Matter|January 15, 1996
Formation times of electric-field domains in doped GaAs-AlAs superlatticesKastrup, Prengel, Grahn, et al.
Physical Review. B, Condensed Matter|January 15, 1996
Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescenceMenniger, Jahn, Brandt, et al.
Physical Review. B, Condensed Matter|December 15, 1994
State mixing in InAs/GaAs quantum dots at the pressure-induced Gamma -X crossingLi, Goñi, Syassen, et al.
Physical Review. B, Condensed Matter|September 15, 1989
Type-I-type-II transition in ultra-short-period GaAs/AlAs superlatticesCingolani, Baldassarre, Ferrara, et al.
Physical Review. B, Condensed Matter|June 15, 1990
Decay times of one-dimensional excitons in GaAs/AlxGa1-xAs quantum-well wiresKohl, Heitmann, Rühle, et al.
Physical Review. B, Condensed Matter|August 15, 1987
Carrier cooling in undoped and modulation-doped Ga0.47In0.53As multiple quantum wellsLobentanzer, Rühle, Polland, et al.
Pageof 39

Showing results (191-200 of 386) with videos related to

Sort By:
Pageof 39
Physical Review Letters|October 6, 2000
Reentrant mound formation in GaAs(001) homoepitaxy observed by ex situ atomic force microscopyApostolopoulos, Herfort, Daweritz, et al.
Physical Review. B, Condensed Matter|June 15, 1990
Observation of high-index excitonic states in AlxGa1-xAs/AlAs ternary-alloy quantum wells by two-photon spectroscopyCatalano, Cingolani, Lepore, et al.
Physical Review. B, Condensed Matter|January 15, 1995
Hall effect over integral filling factors in GaAs/AlxGa1-xAs quantum wiresMani, von Klitzing K, Ploog
Physical Review. B, Condensed Matter|July 15, 1995
Optical properties of (311)-oriented GaAs/AlAs superlatticesSantos, Cantarero, Cardona, et al.
Physical Review. B, Condensed Matter|January 15, 1996
Formation times of electric-field domains in doped GaAs-AlAs superlatticesKastrup, Prengel, Grahn, et al.
Physical Review. B, Condensed Matter|January 15, 1996
Identification of optical transitions in cubic and hexagonal GaN by spatially resolved cathodoluminescenceMenniger, Jahn, Brandt, et al.
Physical Review. B, Condensed Matter|December 15, 1994
State mixing in InAs/GaAs quantum dots at the pressure-induced Gamma -X crossingLi, Goñi, Syassen, et al.
Physical Review. B, Condensed Matter|September 15, 1989
Type-I-type-II transition in ultra-short-period GaAs/AlAs superlatticesCingolani, Baldassarre, Ferrara, et al.
Physical Review. B, Condensed Matter|June 15, 1990
Decay times of one-dimensional excitons in GaAs/AlxGa1-xAs quantum-well wiresKohl, Heitmann, Rühle, et al.
Physical Review. B, Condensed Matter|August 15, 1987
Carrier cooling in undoped and modulation-doped Ga0.47In0.53As multiple quantum wellsLobentanzer, Rühle, Polland, et al.
Pageof 39