Po-Tsung Tu - JoVE Visualize

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Micromachines|August 26, 2023

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device ApplicationsAn-Chen Liu, Po-Tsung Tu, Hsin-Chu Chen, et al.

Micromachines|July 2, 2021

The Evolution of Manufacturing Technology for GaN Electronic DevicesAn-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, et al.

Micromachines|October 23, 2021

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous IntegrationLung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, et al.

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Showing results (1-10 of 3) with videos related to

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Micromachines|August 26, 2023

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device ApplicationsAn-Chen Liu, Po-Tsung Tu, Hsin-Chu Chen, et al.

Micromachines|July 2, 2021

The Evolution of Manufacturing Technology for GaN Electronic DevicesAn-Chen Liu, Po-Tsung Tu, Catherine Langpoklakpam, et al.

Micromachines|October 23, 2021

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous IntegrationLung-Hsing Hsu, Yung-Yu Lai, Po-Tsung Tu, et al.

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