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Potaraju Yugender

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Micromachines|January 8, 2025
Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe ChannelPotaraju Yugender, Rudra Sankar Dhar, Swagat Nanda, et al.
Nanomaterials (Basel, Switzerland)|December 10, 2025
Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal EffectsPotaraju Yugender, Sneha Singh, Kuleen Kumar, et al.
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Showing results (1-10 of 2) with videos related to

Sort By:
Pageof 1
Micromachines|January 8, 2025
Enhanced Drive Current in 10 nm Channel Length Gate-All-Around Field-Effect Transistor Using Ultrathin Strained Si/SiGe ChannelPotaraju Yugender, Rudra Sankar Dhar, Swagat Nanda, et al.
Nanomaterials (Basel, Switzerland)|December 10, 2025
Development and Performance Analysis of High-K Spacer-Induced Strained Si/SiGe Channel-Based Gate All Around FET for Thermal EffectsPotaraju Yugender, Sneha Singh, Kuleen Kumar, et al.
Pageof 1