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Qi-Cheng Hu

Showing results (1-10 of 4) with videos related to

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Nanoscale|April 24, 2023
High-sensitivity silicon carbide divacancy-based temperature sensingQin-Yue Luo, Shuang Zhao, Qi-Cheng Hu, et al.
Optics Letters|June 2, 2024
Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavityQi-Cheng Hu, Ji Xu, Qin-Yue Luo, et al.
Nano Letters|February 12, 2026
Charge-State Control of Modified Divacancies in Silicon CarbideWu-Xi Lin, Qi-Cheng Hu, Zhi-He Hao, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 16, 2026
High-Yield Engineering and Identification of Oxygen-Related Modified Divacancies in 4H-SiCQi-Cheng Hu, Ji-Yang Zhou, Shuo Ren, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
Nanoscale|April 24, 2023
High-sensitivity silicon carbide divacancy-based temperature sensingQin-Yue Luo, Shuang Zhao, Qi-Cheng Hu, et al.
Optics Letters|June 2, 2024
Enhancement of silicon vacancy fluorescence intensity in silicon carbide using a dielectric cavityQi-Cheng Hu, Ji Xu, Qin-Yue Luo, et al.
Nano Letters|February 12, 2026
Charge-State Control of Modified Divacancies in Silicon CarbideWu-Xi Lin, Qi-Cheng Hu, Zhi-He Hao, et al.
Advanced Materials (Deerfield Beach, Fla.)|May 16, 2026
High-Yield Engineering and Identification of Oxygen-Related Modified Divacancies in 4H-SiCQi-Cheng Hu, Ji-Yang Zhou, Shuo Ren, et al.
Pageof 1