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Nanomaterials (Basel, Switzerland)|September 12, 2018
InPBi Quantum Dots for Super-Luminescence DiodesLiyao Zhang, Yuxin Song, Qimiao Chen, et al.Nanoscale Research Letters|March 3, 2016
Detailed Study of the Influence of InGaAs Matrix on the Strain Reduction in the InAs Dot-In-Well StructurePeng Wang, Qimiao Chen, Xiaoyan Wu, et al.Nanoscale|May 10, 2022
Transferable single-layer GeSn nanomembrane resonant-cavity-enhanced photodetectors for 2 μm band optical communication and multi-spectral short-wave infrared sensingQimiao Chen, Shaoteng Wu, Lin Zhang, et al.Nanoscale Research Letters|August 2, 2017
Theoretical Investigation of Biaxially Tensile-Strained Germanium NanowiresZhongyunshen Zhu, Yuxin Song, Qimiao Chen, et al.Optics Express|February 25, 2022
Grating and hole-array enhanced germanium lateral p-i-n photodetectors on an insulator platformHao Zhou, Qimiao Chen, Shaoteng Wu, et al.Nanoscale|February 22, 2023
Wafer-scale nanostructured black silicon with morphology engineering <i>via</i> advanced Sn-assisted dry etching for sensing and solar cell applicationsShaoteng Wu, Qimiao Chen, Lin Zhang, et al.Nanoscale|April 30, 2015
A new route toward light emission from Ge: tensile-strained quantum dotsQimiao Chen, Yuxin Song, Kai Wang, et al.Optics Letters|July 30, 2021
GeSn-on-insulator dual-waveband resonant-cavity-enhanced photodetectors at the 2 µm and 1.55 µm optical communication bandsQimiao Chen, Shaoteng Wu, Lin Zhang, et al.Optics Express|April 6, 2021
Surface plasmon enhanced GeSn photodetectors operating at 2 µmHao Zhou, Lin Zhang, Jinchao Tong, et al.Optics Letters|March 1, 2024
High-performance Ge-on-insulator lateral p-i-n waveguide photodetectors for electronic-photonic integrated circuits at telecommunication wavelengthsTzu-Yang Huang, Radhika Bansal, Soumava Ghosh, et al.Pageof 2