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Nanoscale Research Letters|December 21, 2010
Optimal Growth Conditions for Selective Ge Islands Positioning on Pit-Patterned Si(001)R Bergamaschini, F Montalenti, L MiglioNanotechnology|June 8, 2011
Temperature-dependent evolution of the wetting layer thickness during Ge deposition on Si(001)R Bergamaschini, M Brehm, M Grydlik, et al.Physical Review Letters|October 30, 2012
Anomalous smoothing preceding island formation during growth on patterned substratesR Bergamaschini, J Tersoff, Y Tu, et al.Physical Chemistry Chemical Physics : PCCP|October 4, 2022
Nanostructured 3C-SiC on Si by a network of (111) platelets: a fully textured film generated by intrinsic growth anisotropyG M Vanacore, D Chrastina, E Scalise, et al.ACS Applied Materials & Interfaces|October 31, 2025
Supersaturation-Dependent Competition between β and κ Phases in the MOVPE Growth of Ga2O3 on Al2O3 (0001) and GaN (0001) SubstratesL Seravalli, A Ugolotti, R Bergamaschini, et al.Pageof 1