Showing results (11-20 of 35) with videos related to

Sort By:
Pageof 4
ACS Nano|April 10, 2013
The unexpected role of arsenic in driving the selective growth of InAs quantum dots on GaAsFabrizio Arciprete, Ernesto Placidi, Rita Magri, et al.
Nano Letters|July 13, 2006
Photoluminescence and intrinsic properties of MBE-grown InN nanowiresToma Stoica, Ralph J Meijers, Raffaella Calarco, et al.
Scientific Reports|April 14, 2018
Electrical and optical properties of epitaxial binary and ternary GeTe-Sb2Te3 alloysJos E Boschker, Xiang Lü, Valeria Bragaglia, et al.
Nano Letters|August 21, 2008
Flux quantization effects in InN nanowiresThomas Richter, Christian Blömers, Hans Lüth, et al.
Nano Letters|July 3, 2007
Nucleation and growth of GaN nanowires on Si(111) performed by molecular beam epitaxyRaffaella Calarco, Ralph J Meijers, Ratan K Debnath, et al.
Nanomaterials (Basel, Switzerland)|April 23, 2022
Growth, Electronic and Electrical Characterization of Ge-Rich Ge-Sb-Te AlloyAdriano Díaz Fattorini, Caroline Chèze, Iñaki López García, et al.
Nanoscale|November 3, 2015
Interface formation of two- and three-dimensionally bonded materials in the case of GeTe-Sb₂Te₃ superlatticesJamo Momand, Ruining Wang, Jos E Boschker, et al.
Nanoscale|June 17, 2017
Dynamic reconfiguration of van der Waals gaps within GeTe-Sb2Te3 based superlatticesJamo Momand, Ruining Wang, Jos E Boschker, et al.
Nano Letters|November 8, 2012
Spontaneous nucleation and growth of GaN nanowires: the fundamental role of crystal polaritySergio Fernández-Garrido, Xiang Kong, Tobias Gotschke, et al.
Nano Letters|July 13, 2006
Defect distribution along single GaN nanowhiskersAnna Cavallini, Laura Polenta, Marco Rossi, et al.
Pageof 4