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Rainer Waser

Showing results (91-100 of 102) with videos related to

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Nanoscale|September 10, 2019
Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO<sub>x</sub> thin film with x∼ 1Carlos M M Rosário, Bo Thöner, Alexander Schönhals, et al.
ACS Nano|June 30, 2017
Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive DevicesChristoph Baeumer, Richard Valenta, Christoph Schmitz, et al.
Nature Communications|September 7, 2013
In situ observation of filamentary conducting channels in an asymmetric Ta₂O5-x/TaO2-x bilayer structureGyeong-Su Park, Young Bae Kim, Seong Yong Park, et al.
Nature Communications|August 20, 2016
Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodesChristoph Baeumer, Christoph Schmitz, Astrid Marchewka, et al.
Nature Communications|October 20, 2015
Spectromicroscopic insights for rational design of redox-based memristive devicesChristoph Baeumer, Christoph Schmitz, Amr H H Ramadan, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 9, 2018
Oxygen Exchange Processes between Oxide Memristive Devices and Water MoleculesThomas Heisig, Christoph Baeumer, Ute N Gries, et al.
Nature Communications|November 9, 2024
Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfacesMoritz L Weber, Dylan Jennings, Sarah Fearn, et al.
Faraday Discussions|January 31, 2019
Phase-change memories (PCM) - Experiments and modelling: general discussionPhilip Bartlett, Alexandra I Berg, Marco Bernasconi, et al.
Nature Materials|January 12, 2021
Tuning electrochemically driven surface transformation in atomically flat LaNiO<sub>3</sub> thin films for enhanced water electrolysisChristoph Baeumer, Jiang Li, Qiyang Lu, et al.
Faraday Discussions|January 22, 2019
Valence change ReRAMs (VCM) - Experiments and modelling: general discussionMazakazu Aono, Christoph Baeumer, Philip Bartlett, et al.
Pageof 11

Showing results (91-100 of 102) with videos related to

Sort By:
Pageof 11
Nanoscale|September 10, 2019
Metallic filamentary conduction in valence change-based resistive switching devices: the case of TaO<sub>x</sub> thin film with x∼ 1Carlos M M Rosário, Bo Thöner, Alexander Schönhals, et al.
ACS Nano|June 30, 2017
Subfilamentary Networks Cause Cycle-to-Cycle Variability in Memristive DevicesChristoph Baeumer, Richard Valenta, Christoph Schmitz, et al.
Nature Communications|September 7, 2013
In situ observation of filamentary conducting channels in an asymmetric Ta₂O5-x/TaO2-x bilayer structureGyeong-Su Park, Young Bae Kim, Seong Yong Park, et al.
Nature Communications|August 20, 2016
Quantifying redox-induced Schottky barrier variations in memristive devices via in operando spectromicroscopy with graphene electrodesChristoph Baeumer, Christoph Schmitz, Astrid Marchewka, et al.
Nature Communications|October 20, 2015
Spectromicroscopic insights for rational design of redox-based memristive devicesChristoph Baeumer, Christoph Schmitz, Amr H H Ramadan, et al.
Advanced Materials (Deerfield Beach, Fla.)|June 9, 2018
Oxygen Exchange Processes between Oxide Memristive Devices and Water MoleculesThomas Heisig, Christoph Baeumer, Ute N Gries, et al.
Nature Communications|November 9, 2024
Thermal stability and coalescence dynamics of exsolved metal nanoparticles at charged perovskite surfacesMoritz L Weber, Dylan Jennings, Sarah Fearn, et al.
Faraday Discussions|January 31, 2019
Phase-change memories (PCM) - Experiments and modelling: general discussionPhilip Bartlett, Alexandra I Berg, Marco Bernasconi, et al.
Nature Materials|January 12, 2021
Tuning electrochemically driven surface transformation in atomically flat LaNiO<sub>3</sub> thin films for enhanced water electrolysisChristoph Baeumer, Jiang Li, Qiyang Lu, et al.
Faraday Discussions|January 22, 2019
Valence change ReRAMs (VCM) - Experiments and modelling: general discussionMazakazu Aono, Christoph Baeumer, Philip Bartlett, et al.
Pageof 11