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Science Advances
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November 22, 2017
Atomically engineered electron spin lifetimes of 30 s in silicon
Thomas F Watson, Bent Weber, Yu-Ling Hsueh, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
March 19, 2015
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
Muhammad Usman, Rajib Rahman, Joe Salfi, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
August 27, 2019
WSe<sub>2</sub> Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
Chin-Sheng Pang, Chin-Yi Chen, Tarek Ameen, et al.
Physical Review Letters
|
August 7, 2007
High precision quantum control of single donor spins in silicon
Rajib Rahman, Cameron J Wellard, Forrest R Bradbury, et al.
Physical Review Letters
|
December 27, 2014
Spin-lattice relaxation times of single donors and donor clusters in silicon
Yu-Ling Hsueh, Holger Büch, Yaohua Tan, et al.
ACS Nano
|
December 20, 2018
Complementary Black Phosphorus Tunneling Field-Effect Transistors
Peng Wu, Tarek Ameen, Huairuo Zhang, et al.
Nano Letters
|
April 11, 2013
Noninvasive spatial metrology of single-atom devices
Fahd A Mohiyaddin, Rajib Rahman, Rachpon Kalra, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
October 8, 2022
The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors
Ludwik Kranz, Samuel K Gorman, Brandur Thorgrimsson, et al.
Optics Express
|
April 27, 2022
Deep ultra-violet plasmonics: exploiting momentum-resolved electron energy loss spectroscopy to probe germanium
Zohreh Poursoti, Wenbo Sun, Sathwik Bharadwaj, et al.
Physical Review Letters
|
December 27, 2014
Coherent control of a single ²⁹Si nuclear spin qubit
Jarryd J Pla, Fahd A Mohiyaddin, Kuan Y Tan, et al.
Page
of 4
Search research articles
Search
Showing results (11-20 of 34) with videos related to
Sort By:
Page
of 4
Science Advances
|
November 22, 2017
Atomically engineered electron spin lifetimes of 30 s in silicon
Thomas F Watson, Bent Weber, Yu-Ling Hsueh, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal
|
March 19, 2015
Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
Muhammad Usman, Rajib Rahman, Joe Salfi, et al.
Small (Weinheim an Der Bergstrasse, Germany)
|
August 27, 2019
WSe<sub>2</sub> Homojunction Devices: Electrostatically Configurable as Diodes, MOSFETs, and Tunnel FETs for Reconfigurable Computing
Chin-Sheng Pang, Chin-Yi Chen, Tarek Ameen, et al.
Physical Review Letters
|
August 7, 2007
High precision quantum control of single donor spins in silicon
Rajib Rahman, Cameron J Wellard, Forrest R Bradbury, et al.
Physical Review Letters
|
December 27, 2014
Spin-lattice relaxation times of single donors and donor clusters in silicon
Yu-Ling Hsueh, Holger Büch, Yaohua Tan, et al.
ACS Nano
|
December 20, 2018
Complementary Black Phosphorus Tunneling Field-Effect Transistors
Peng Wu, Tarek Ameen, Huairuo Zhang, et al.
Nano Letters
|
April 11, 2013
Noninvasive spatial metrology of single-atom devices
Fahd A Mohiyaddin, Rajib Rahman, Rachpon Kalra, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
October 8, 2022
The Use of Exchange Coupled Atom Qubits as Atomic-Scale Magnetic Field Sensors
Ludwik Kranz, Samuel K Gorman, Brandur Thorgrimsson, et al.
Optics Express
|
April 27, 2022
Deep ultra-violet plasmonics: exploiting momentum-resolved electron energy loss spectroscopy to probe germanium
Zohreh Poursoti, Wenbo Sun, Sathwik Bharadwaj, et al.
Physical Review Letters
|
December 27, 2014
Coherent control of a single ²⁹Si nuclear spin qubit
Jarryd J Pla, Fahd A Mohiyaddin, Kuan Y Tan, et al.
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of 4