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Nanotechnology|November 18, 2022
Low-power multilevel resistive switching in<i>β-</i>Ga<sub>2</sub>O<sub>3</sub>based RRAM devicesRavi Teja Velpula, Barsha Jain, Hieu Pham Trung Nguyen
Applied Optics|May 13, 2021
Controlled carrier mean free path for the enhanced efficiency of III-nitride deep-ultraviolet light-emitting diodesBarsha Jain, Ravi Teja Velpula, Moulik Patel, et al.
Optics Letters|September 15, 2020
High-performance electron-blocking-layer-free deep ultraviolet light-emitting diodes implementing a strip-in-a-barrier structureRavi Teja Velpula, Barsha Jain, Swetha Velpula, et al.
ACS Photonics|February 9, 2026
Extreme-Temperature (1000 °C) Operation of InGaN/AlGaN Nanowire Light-Emitting DiodesMano Bala Sankar Muthu, Injamamul Hoque Emu, Ravi Teja Velpula, et al.
Micromachines|April 3, 2021
Improved Performance of Electron Blocking Layer Free AlGaN Deep Ultraviolet Light-Emitting Diodes Using Graded Staircase BarriersBarsha Jain, Ravi Teja Velpula, Moulik Patel, et al.
Scientific Reports|February 15, 2020
Epitaxial Growth and Characterization of AlInN-Based Core-Shell Nanowire Light Emitting Diodes Operating in the Ultraviolet SpectrumRavi Teja Velpula, Barsha Jain, Moab Rajan Philip, et al.
Applied Optics|January 6, 2023
Impact of a prestrained graded InGaN/GaN interlayer towards enhanced optical characteristics of a multi-quantum well LED based on silicon substrateSamadrita Das, Trupti Ranjan Lenka, Fazal Ahmed Talukdar, et al.
Optics Letters|June 1, 2026
Thermal stability of MBE-grown InGaN/AlGaN red nanowire LEDs for extreme environment applicationsMano Bala Sankar Muthu, Swetha Velpula, Ravi Teja Velpula, et al.
Applied Optics|October 18, 2022
High-efficiency InGaN blue LEDs with reduced positive sheet polarizationRavi Teja Velpula, Barsha Jain, Moulik Patel, et al.
Applied Optics|January 11, 2023
Characteristics of leakage currents in InGaN/AlGaN nanowire-based red microLEDsSanju Shrestha, Ravi Teja Velpula, Bed Prasad Pandey, et al.
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