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Reem Alhasani

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Materials (Basel, Switzerland)|October 29, 2025
Advances in High-Voltage Power Electronics Using Ga<sub>2</sub>O<sub>3</sub>-Based HEMT: ModelingReem Alhasani, Hadba Hussain, Mohammed A Alkhamisah, et al.
Scientific Reports|March 11, 2022
An enhanced two-dimensional hole gas (2DHG) C-H diamond with positive surface charge model for advanced normally-off MOSFET devicesReem Alhasani, Taichi Yabe, Yutaro Iyama, et al.
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Showing results (1-10 of 2) with videos related to

Sort By:
Pageof 1
Materials (Basel, Switzerland)|October 29, 2025
Advances in High-Voltage Power Electronics Using Ga<sub>2</sub>O<sub>3</sub>-Based HEMT: ModelingReem Alhasani, Hadba Hussain, Mohammed A Alkhamisah, et al.
Scientific Reports|March 11, 2022
An enhanced two-dimensional hole gas (2DHG) C-H diamond with positive surface charge model for advanced normally-off MOSFET devicesReem Alhasani, Taichi Yabe, Yutaro Iyama, et al.
Pageof 1