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Ultramicroscopy|August 29, 2024
The impact of electric field strength on the accuracy of boron dopant quantification in silicon using atom probe tomographyBavley Guerguis, Ramya Cuduvally, Richard J H Morris, et al.Ultramicroscopy|July 28, 2019
Atom probe of GaN/AlGaN heterostructures: The role of electric field, sample crystallography and laser excitation on quantificationRichard J H Morris, Ramya Cuduvally, Davit Melkonyan, et al.Analytical Chemistry|February 3, 2012
Overcoming low Ge ionization and erosion rate variation for quantitative ultralow energy secondary ion mass spectrometry depth profiles of Si(1-x)Ge(x)/Ge quantum well structuresRichard J H Morris, Mark G Dowsett, Richard Beanland, et al.Ultramicroscopy|January 10, 2020
Potential sources of compositional inaccuracy in the atom probe tomography of InxGa1-xAsRamya Cuduvally, Richard J H Morris, Piero Ferrari, et al.Ultramicroscopy|August 21, 2022
Field dependent study on the impact of co-evaporated multihits and ion pile-up for the apparent stoichiometric quantification of GaN and AlNRichard J H Morris, Ramya Cuduvally, Jhao-Rong Lin, et al.Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|November 12, 2025
A Statistical Approach for Evaluating the Spatial Distribution and Local Atomic Environment of Dopants Using Atom Probe TomographyJhao-Rong Lin, Richard J H Morris, Jeroen E Scheerder, et al.Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada|January 17, 2024
Significant Oxygen Underestimation When Quantifying Barium-Doped SrTiO Layers by Atom Probe TomographyRichard J H Morris, Jhao-Rong Lin, Jeroen E Scheerder, et al.Pageof 1