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Scientific Reports|April 5, 2020
Electric dipole of InN/InGaN quantum dots and holes and giant surface photovoltage directly measured by Kelvin probe force microscopyYinping Qian, Peng Wang, Lujia Rao, et al.ACS Applied Materials & Interfaces|February 4, 2021
Anisotropic Piezoelectric Response from InGaN Nanowires with Spatially Modulated Composition and Topography over a Textured Si(100) SubstratePeng Wang, Changkun Song, Xingfu Wang, et al.Scientific Reports|March 21, 2012
Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity couplingMuhammad Danang Birowosuto, Hisashi Sumikura, Shinji Matsuo, et al.Scientific Reports|October 12, 2019
Spatial Surface Charge Engineering for Electrochemical ElectrodesLingyun Xie, Peng Wang, Yinping Qian, et al.Optics Letters|August 4, 2010
Controlling mode degeneracy in a photonic crystal nanocavity with infiltrated liquid crystalBowen Wang, Mehmet A Dündar, Andrei Yu Silov, et al.Optics Express|March 16, 2012
InAs/InP(100) quantum dot waveguide photodetectors for swept-source optical coherence tomography around 1.7 µmYuqing Jiao, Bauke W Tilma, Junji Kotani, et al.Optics Express|June 9, 2009
Integration of InP/InGaAsP photodetectors onto silicon-on-insulator waveguide circuitsGunther Roelkens, Joost Brouckaert, Dirk Taillaert, et al.Optics Express|June 17, 2009
Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53micromYohan Barbarin, Erwin A J M Bente, Martijn J R Heck, et al.Scientific Reports|July 28, 2018
Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride SemiconductorsMani Azadmand, Luca Barabani, Sergio Bietti, et al.Optics Express|April 15, 2010
Sensitivities of InGaAsP photonic crystal membrane nanocavities to hole refractive indexMehmet A Dündar, Els C I Ryckebosch, Richard Nötzel, et al.Pageof 3