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Nano Letters|April 17, 2015
Size and Orientation Effects on the Kinetics and Structure of Nickelide Contacts to InGaAs Fin StructuresRenjie Chen, Shadi A DayehSmall (Weinheim an Der Bergstrasse, Germany)|June 10, 2017
Recordings and Analysis of Atomic Ledge and Dislocation Movements in InGaAs to Nickelide Nanowire Phase TransformationRenjie Chen, Shadi A DayehSensors (Basel, Switzerland)|July 16, 2020
Physics-Based Device Models and Progress Review for Active Piezoelectric Semiconductor DevicesHongseok Oh, Shadi A DayehIEEE Journal of Solid-State Circuits|May 16, 2025
A 2.5-20 kSps in-pixel direct digitization ECoG front-end with sub-millisecond stimulation artifact recoveryAditi Jain, Eric Fogleman, Paul Botros, et al.Nano Letters|September 22, 2010
Direct observation of nanoscale size effects in Ge semiconductor nanowire growthShadi A Dayeh, S T PicrauxMRS Bulletin|July 21, 2023
Electrochemical and electrophysiological considerations for clinical high channel count neural interfacesRitwik Vatsyayan, Jihwan Lee, Andrew M Bourhis, et al.Advanced Functional Materials|August 11, 2025
The conformal, high-density SpineWrap microelectrode array for focal stimulation and selective muscle recruitmentSamantha M Russman, Rhea Montgomery-Walsh, Ritwik Vatsyayan, et al.Nano Letters|August 1, 2013
Origin of polytype formation in VLS-grown Ge nanowires through defect generation and nanowire kinkingNari Jeon, Shadi A Dayeh, Lincoln J LauhonNano Letters|April 29, 2009
Surface diffusion and substrate-nanowire adatom exchange in InAs nanowire growthShadi A Dayeh, Edward T Yu, Deli WangNano Letters|July 5, 2007
III-V nanowire growth mechanism: V/III ratio and temperature effectsShadi A Dayeh, Edward T Yu, Deli WangPageof 9