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ACS Nano
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February 12, 2016
Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride
Dmitry Ruzmetov, Kehao Zhang, Gheorghe Stan, et al.
2D Materials
|
April 15, 2024
Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer <math><msub><mtext>MoS</mtext><mn>2</mn></msub></math> and GaN
Dmitry Ruzmetov, Mahesh R Neupane, Andrew Herzing, et al.
ACS Nano
|
January 28, 2015
Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition
Sarah M Eichfeld, Lorraine Hossain, Yu-Chuan Lin, et al.
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of 2
Search research articles
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Showing results (11-20 of 13) with videos related to
Sort By:
Page
of 2
You have reached the last page of results.
This site can display upto 13 results.
ACS Nano
|
February 12, 2016
Vertical 2D/3D Semiconductor Heterostructures Based on Epitaxial Molybdenum Disulfide and Gallium Nitride
Dmitry Ruzmetov, Kehao Zhang, Gheorghe Stan, et al.
2D Materials
|
April 15, 2024
Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer <math><msub><mtext>MoS</mtext><mn>2</mn></msub></math> and GaN
Dmitry Ruzmetov, Mahesh R Neupane, Andrew Herzing, et al.
ACS Nano
|
January 28, 2015
Highly scalable, atomically thin WSe2 grown via metal-organic chemical vapor deposition
Sarah M Eichfeld, Lorraine Hossain, Yu-Chuan Lin, et al.
Page
of 2