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Robert M Wallace

Showing results (1-10 of 78) with videos related to

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ACS Applied Materials & Interfaces|September 8, 2016
Surface Analysis of WSe<sub>2</sub> Crystals: Spatial and Electronic VariabilityRafik Addou, Robert M Wallace
ACS Applied Materials & Interfaces|May 19, 2015
Surface Defects on Natural MoS2Rafik Addou, Luigi Colombo, Robert M Wallace
ACS Applied Materials & Interfaces|March 25, 2021
Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS<sub>2</sub>Xinglu Wang, Seong Yeoul Kim, Robert M Wallace
Nanoscale Advances|September 22, 2022
Morphology-dependent fluorescence of europium-doped cerium oxide nanomaterialsAnne E D'Achille, Robert M Wallace, Jeffery L Coffer
Nano Letters|March 26, 2014
The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfacesCheng Gong, Luigi Colombo, Robert M Wallace, et al.
Nano Letters|February 9, 2016
Theoretical Demonstration of the Ionic BarristorYifan Nie, Suklyun Hong, Robert M Wallace, et al.
ACS Applied Materials & Interfaces|March 12, 2016
MoS2-Titanium Contact Interface ReactionsStephen McDonnell, Christopher Smyth, Christopher L Hinkle, et al.
ACS Omega|August 29, 2019
Computational Study of MoS<sub>2</sub>/HfO<sub>2</sub> Defective Interfaces for Nanometer-Scale ElectronicsSantosh Kc, Roberto C Longo, Robert M Wallace, et al.
Materials (Basel, Switzerland)|April 3, 2019
High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃Ava Khosravi, Rafik Addou, Massimo Catalano, et al.
The Journal of Chemical Physics|February 10, 2017
Impurity and silicate formation dependence on O<sub>3</sub> pulse time and the growth temperature in atomic-layer-deposited La<sub>2</sub>O<sub>3</sub> thin filmsTae Joo Park, Young-Chul Byun, Robert M Wallace, et al.
Pageof 8

Showing results (1-10 of 78) with videos related to

Sort By:
Pageof 8
ACS Applied Materials & Interfaces|September 8, 2016
Surface Analysis of WSe<sub>2</sub> Crystals: Spatial and Electronic VariabilityRafik Addou, Robert M Wallace
ACS Applied Materials & Interfaces|May 19, 2015
Surface Defects on Natural MoS2Rafik Addou, Luigi Colombo, Robert M Wallace
ACS Applied Materials & Interfaces|March 25, 2021
Interface Chemistry and Band Alignment Study of Ni and Ag Contacts on MoS<sub>2</sub>Xinglu Wang, Seong Yeoul Kim, Robert M Wallace
Nanoscale Advances|September 22, 2022
Morphology-dependent fluorescence of europium-doped cerium oxide nanomaterialsAnne E D'Achille, Robert M Wallace, Jeffery L Coffer
Nano Letters|March 26, 2014
The unusual mechanism of partial Fermi level pinning at metal-MoS2 interfacesCheng Gong, Luigi Colombo, Robert M Wallace, et al.
Nano Letters|February 9, 2016
Theoretical Demonstration of the Ionic BarristorYifan Nie, Suklyun Hong, Robert M Wallace, et al.
ACS Applied Materials & Interfaces|March 12, 2016
MoS2-Titanium Contact Interface ReactionsStephen McDonnell, Christopher Smyth, Christopher L Hinkle, et al.
ACS Omega|August 29, 2019
Computational Study of MoS<sub>2</sub>/HfO<sub>2</sub> Defective Interfaces for Nanometer-Scale ElectronicsSantosh Kc, Roberto C Longo, Robert M Wallace, et al.
Materials (Basel, Switzerland)|April 3, 2019
High-κ Dielectric on ReS₂: In-Situ Thermal Versus Plasma-Enhanced Atomic Layer Deposition of Al₂O₃Ava Khosravi, Rafik Addou, Massimo Catalano, et al.
The Journal of Chemical Physics|February 10, 2017
Impurity and silicate formation dependence on O<sub>3</sub> pulse time and the growth temperature in atomic-layer-deposited La<sub>2</sub>O<sub>3</sub> thin filmsTae Joo Park, Young-Chul Byun, Robert M Wallace, et al.
Pageof 8