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ACS Applied Materials & Interfaces|December 9, 2025
Establishing Doping Limits for ZnGa<sub>2</sub>O<sub>4</sub> for Ultrawide-Band-Gap Semiconductor ApplicationsRomain Claes, Alexander G Squires, David O ScanlonACS Applied Energy Materials|February 13, 2026
Computational Investigation of the Thermoelectric Performance of Environmentally Friendly and Earth-Abundant SrZn<sub>2</sub>S<sub>2</sub>OShipeng Bi, Katarina Brlec, Alexander G Squires, et al.ACS Energy Letters|August 15, 2024
Oxygen Dimerization as a Defect-Driven Process in Bulk LiNiO<sub>2</sub>Alexander G Squires, Lavan Ganeshkumar, Christopher N Savory, et al.Journal of Materials Chemistry. A|September 24, 2025
Excellent thermoelectric performance of Bi<sub>2</sub>MO<sub>4</sub>Cl (M = Y, La, and Bi) derived from ultra-low lattice thermal conductivityShipeng Bi, Christopher N Savory, Alexander G Squires, et al.Chemistry of Materials : a Publication of the American Chemical Society|November 29, 2023
Limits to Hole Mobility and Doping in Copper IodideJoe Willis, Romain Claes, Qi Zhou, et al.Advanced Materials (Deerfield Beach, Fla.)|April 19, 2024
Li-Site Defects Induce Formation of Li-Rich Impurity Phases: Implications for Charge Distribution and Performance of LiNi<sub>0.5-</sub> <sub>x</sub>M<sub>x</sub>Mn<sub>1.5</sub>O<sub>4</sub> Cathodes (M = Fe and Mg; x = 0.05-0.2)Beth E Murdock, Jiayi Cen, Alexander G Squires, et al.Journal of the American Chemical Society|May 30, 2023
Interplay of Static and Dynamic Disorder in the Mixed-Metal Chalcohalide Sn<sub>2</sub>SbS<sub>2</sub>I<sub>3</sub>Adair Nicolson, Joachim Breternitz, Seán R Kavanagh, et al.Acta Crystallographica Section B, Structural Science, Crystal Engineering and Materials|December 5, 2015
Polymorph engineering of CuMO2 (M = Al, Ga, Sc, Y) semiconductors for solar energy applications: from delafossite to wurtziteDavid O Scanlon, Aron WalshPhysical Review Letters|June 4, 2011
Uncovering the complex behavior of hydrogen in Cu2ODavid O Scanlon, Graeme W WatsonInorganic Chemistry|June 6, 2026
Iodine Close Packing in Hybrid Halide Bismuth(III) and Antimony(III) Semiconductors: (NH<sub>3</sub>(CH<sub>2</sub>)<sub>7</sub>NH<sub>3</sub>)<sub>2</sub>Bi<sub>2</sub>I<sub>10</sub> and (NH<sub>3</sub>(CH<sub>2</sub>)<sub>7</sub>NH<sub>3</sub>)<sub>2</sub>Sb<sub>2</sub>I<sub>10</sub>Shelby R Lane, Dominic Cudjoe Asebiah, Alexander G Squires, et al.Pageof 12