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ACS Applied Materials & Interfaces|March 18, 2024
Tunable Neuromorphic Switching Dynamics via Porosity Control in Mesoporous Silica Diffusive MemristorsTongjun Zhang, Li Shao, Ayoub Jaafar, et al.
Nature Reviews. Chemistry|January 8, 2025
Molecular precursors for the electrodeposition of 2D-layered metal chalcogenidesPhilip N Bartlett, C H Kees de Groot, Victoria K Greenacre, et al.
Nanoscale|March 23, 2022
AC-assisted deposition of aggregate free silica films with vertical pore structureGilles E Moehl, Tauqir Nasir, Yisong Han, et al.
Dalton Transactions (Cambridge, England : 2003)|December 23, 2020
Low temperature CVD of thermoelectric SnTe thin films from the single source precursor, [Bu3Sn(TeBu)]Fred Robinson, Daniel W Newbrook, Peter Curran, et al.
Scientific Reports|June 18, 2024
An ultra high-endurance memristor using back-end-of-line amorphous SiCOmesh Kapur, Dongkai Guo, Jamie Reynolds, et al.
Scientific Reports|June 11, 2016
Nanoscale arrays of antimony telluride single crystals by selective chemical vapor depositionRuomeng Huang, Sophie L Benjamin, Chitra Gurnani, et al.
Nanoscale Research Letters|June 7, 2017
Compliance-Free ZrO2/ZrO2 - x /ZrO2 Resistive Memory with Controllable Interfacial Multistate Switching BehaviourRuomeng Huang, Xingzhao Yan, Sheng Ye, et al.
Nanoscale Research Letters|November 4, 2015
Phase-Change Memory Properties of Electrodeposited Ge-Sb-Te Thin FilmRuomeng Huang, Gabriela P Kissling, Andrew Jolleys, et al.
Nanophotonics (Berlin, Germany)|December 5, 2024
Inverse design of structural color: finding multiple solutions via conditional generative adversarial networksPeng Dai, Kai Sun, Xingzhao Yan, et al.
Dalton Transactions (Cambridge, England : 2003)|February 3, 2018
Tin(iv) chalcogenoether complexes as single source precursors for the chemical vapour deposition of SnE2 and SnE (E = S, Se) thin filmsChitra Gurnani, Samantha L Hawken, Andrew L Hector, et al.
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