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Optics Express
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June 12, 2008
High responsivity GaNAsSb p-i-n photodetectors at 1.3 microm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy
K H Tan, S F Yoon, W K Loke, et al.
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Showing results (11-20 of 11) with videos related to
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This site can display upto 11 results.
Optics Express
|
June 12, 2008
High responsivity GaNAsSb p-i-n photodetectors at 1.3 microm grown by radio-frequency nitrogen plasma-assisted molecular beam epitaxy
K H Tan, S F Yoon, W K Loke, et al.
Page
of 2