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Physical Review Letters
|
April 12, 2006
First-principles calculations of vibrational lifetimes and decay channels: hydrogen-related modes in Si
D West, S K Estreicher
Physical Review Letters
|
August 8, 2009
Impact of impurities on the thermal conductivity of semiconductor nanostructures: first-principles theory
T M Gibbons, S K Estreicher
Physical Review Letters
|
February 15, 2001
Unexpected dynamics for self-interstitial clusters in silicon
S K Estreicher, M Gharaibeh, P A Fedders, et al.
Physical Review Letters
|
February 7, 2003
First-principles calculations of pseudolocal vibrational modes: the case of Cu and Cu pairs in Si
S K Estreicher, D West, J Goss, et al.
Scientific Reports
|
August 19, 2016
Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping
M B Bebek, C M Stanley, T M Gibbons, et al.
Physical Review Letters
|
June 29, 2006
Isotope dependence of the lifetime of the vibration of oxygen in silicon
K K Kohli, Gordon Davies, N Q Vinh, et al.
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of 1
Search research articles
Search
Showing results (1-10 of 6) with videos related to
Sort By:
Page
of 1
Physical Review Letters
|
April 12, 2006
First-principles calculations of vibrational lifetimes and decay channels: hydrogen-related modes in Si
D West, S K Estreicher
Physical Review Letters
|
August 8, 2009
Impact of impurities on the thermal conductivity of semiconductor nanostructures: first-principles theory
T M Gibbons, S K Estreicher
Physical Review Letters
|
February 15, 2001
Unexpected dynamics for self-interstitial clusters in silicon
S K Estreicher, M Gharaibeh, P A Fedders, et al.
Physical Review Letters
|
February 7, 2003
First-principles calculations of pseudolocal vibrational modes: the case of Cu and Cu pairs in Si
S K Estreicher, D West, J Goss, et al.
Scientific Reports
|
August 19, 2016
Temperature dependence of phonon-defect interactions: phonon scattering vs. phonon trapping
M B Bebek, C M Stanley, T M Gibbons, et al.
Physical Review Letters
|
June 29, 2006
Isotope dependence of the lifetime of the vibration of oxygen in silicon
K K Kohli, Gordon Davies, N Q Vinh, et al.
Page
of 1