Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

S Tappertzhofen

Showing results (1-10 of 7) with videos related to

Pageof 1
Sort By:
Nanoscale|November 8, 2017
Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devicesS Tappertzhofen, S Hofmann
Nanotechnology|March 22, 2012
Quantum conductance and switching kinetics of AgI-based microcrossbar cellsS Tappertzhofen, I Valov, R Waser
Nanotechnology|October 20, 2021
Memristively programmable transistorsS Tappertzhofen, L Nielen, I Valov, et al.
Nanotechnology|July 12, 2012
Beyond von Neumann--logic operations in passive crossbar arrays alongside memory operationsE Linn, R Rosezin, S Tappertzhofen, et al.
Nature Communications|April 25, 2013
Nanobatteries in redox-based resistive switches require extension of memristor theoryI Valov, E Linn, S Tappertzhofen, et al.
Nanotechnology|February 9, 2023
Buried graphene heterostructures for electrostatic doping of low-dimensional materialsA Gumprich, J Liedtke, S Beck, et al.
Nanotechnology|September 6, 2011
Capacity based nondestructive readout for complementary resistive switchesS Tappertzhofen, E Linn, L Nielen, et al.
Pageof 1

Showing results (1-10 of 7) with videos related to

Sort By:
Pageof 1
Nanoscale|November 8, 2017
Embedded nanoparticle dynamics and their influence on switching behaviour of resistive memory devicesS Tappertzhofen, S Hofmann
Nanotechnology|March 22, 2012
Quantum conductance and switching kinetics of AgI-based microcrossbar cellsS Tappertzhofen, I Valov, R Waser
Nanotechnology|October 20, 2021
Memristively programmable transistorsS Tappertzhofen, L Nielen, I Valov, et al.
Nanotechnology|July 12, 2012
Beyond von Neumann--logic operations in passive crossbar arrays alongside memory operationsE Linn, R Rosezin, S Tappertzhofen, et al.
Nature Communications|April 25, 2013
Nanobatteries in redox-based resistive switches require extension of memristor theoryI Valov, E Linn, S Tappertzhofen, et al.
Nanotechnology|February 9, 2023
Buried graphene heterostructures for electrostatic doping of low-dimensional materialsA Gumprich, J Liedtke, S Beck, et al.
Nanotechnology|September 6, 2011
Capacity based nondestructive readout for complementary resistive switchesS Tappertzhofen, E Linn, L Nielen, et al.
Pageof 1