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Nano Letters|December 22, 2025
Low-Field Optical Polarization in Type-II Quantum Dots via Nuclear-Driven Dark State MixingGabriel M Jacobsen, Vinicius A de Oliveira, Baolai Liang, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|October 26, 2020
Impact of defects on photoexcited carrier relaxation dynamics in GeSn thin filmsS V Kondratenko, S S Derenko, Yu I Mazur, et al.Optics Express|June 13, 2014
Raman scattering reveals strong LO-phonon-hole-plasmon coupling in nominally undoped GaAsBi: optical determination of carrier concentrationJ A Steele, R A Lewis, M Henini, et al.Physical Review Letters|October 15, 2008
Coherent exciton-surface-plasmon-polariton interaction in hybrid metal-semiconductor nanostructuresP Vasa, R Pomraenke, S Schwieger, et al.Human Resources for Health|April 2, 2023
Assessment of the distribution of human and material resources for eye health in the public sector in Nampula, MozambiqueDulnério Barbosa Sengo, Zubair Momade Abudo Salamo, Isaura Ilorena d'Alva Brito Dos Santos, et al.Nanoscale Research Letters|April 1, 2017
Photoluminescence Study of the Interface Fluctuation Effect for InGaAs/InAlAs/InP Single Quantum Well with Different ThicknessYing Wang, Xinzhi Sheng, Qinglin Guo, et al.Nano Letters|April 2, 2010
Intersublevel infrared photodetector with strain-free GaAs quantum dot pairs grown by high-temperature droplet epitaxyJiang Wu, Dali Shao, Vitaliy G Dorogan, et al.Nanotechnology|August 20, 2011
Optical evidence of a quantum well channel in low temperature molecular beam epitaxy grown Ga(AsBi)/GaAs nanostructureYu I Mazur, V G Dorogan, M Schmidbauer, et al.Nanotechnology|May 30, 2014
Mechanism of strain-influenced quantum well thickness reduction in GaN/AlN short-period superlatticesA V Kuchuk, V P Kladko, T L Petrenko, et al.Nanomaterials (Basel, Switzerland)|June 13, 2024
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam EpitaxyCalbi Gunder, Mohammad Zamani-Alavijeh, Emmanuel Wangila, et al.Pageof 17