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Nanoscale Research Letters|May 18, 2016
The Peculiarities of Strain Relaxation in GaN/AlN Superlattices Grown on Vicinal GaN (0001) Substrate: Comparative XRD and AFM StudyAndrian V Kuchuk, Serhii Kryvyi, Petro M Lytvyn, et al.
Nanotechnology|August 12, 2011
Improved photoluminescence efficiency of patterned quantum dots incorporating a dots-in-the-well structureP S Wong, B L Liang, V G Dorogan, et al.
Nanoscale|July 8, 2025
Optical spin polarization by coherent magnetoabsorption generationGabriel M Jacobsen, Vinicius A Oliveira, Baolai Liang, et al.
Nanotechnology|December 19, 2013
Effects of AlGaAs cladding layers on the luminescence of GaAs/GaAs1-xBix/GaAs heterostructuresYu I Mazur, V G Dorogan, L D de Souza, et al.
Crystal Growth & Design|July 6, 2026
Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge0.85Sn0.15 on Ge(001)Dinesh Baral, Nirosh M Eldose, Diandian Zhang, et al.
ACS Applied Materials & Interfaces|October 3, 2015
Nanoscale Electrostructural Characterization of Compositionally Graded Al(x)Ga(1-x)N Heterostructures on GaN/Sapphire (0001) SubstrateAndrian V Kuchuk, Petro M Lytvyn, Chen Li, et al.
Nanoscale Research Letters|June 11, 2017
Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on SapphireBogdan I Tsykaniuk, Andrii S Nikolenko, Viktor V Strelchuk, et al.
Nanotechnology|December 21, 2016
Investigation of electrically active defects in InGaAs quantum wire intermediate-band solar cells using deep-level transient spectroscopy techniqueNoor Alhuda Al Saqri, Jorlandio F Felix, Mohsin Aziz, et al.
Optics Express|July 1, 2011
Second harmonic generation in AlGaAs photonic wires using low power continuous wave lightD Duchesne, K A Rutkowska, M Volatier, et al.
Physical Review Letters|April 7, 2010
Aharonov-Bohm interference in neutral excitons: effects of built-in electric fieldsM D Teodoro, V L Campo, V Lopez-Richard, et al.
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