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Sensors (Basel, Switzerland)|March 28, 2026

Transient Charge Collection in Ultra-Thin SiC Membranes for Single-Ion DetectionEnrico Sangregorio, Alfio Samuele Mancuso, Saverio De Luca, et al.

Materials (Basel, Switzerland)|February 27, 2026

High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature OperationAlfio Samuele Mancuso, Saverio De Luca, Enrico Sangregorio, et al.

Materials (Basel, Switzerland)|June 13, 2025

Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction DetectorAlfio Samuele Mancuso, Enrico Sangregorio, Annamaria Muoio, et al.

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Showing results (1-10 of 3) with videos related to

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Sensors (Basel, Switzerland)|March 28, 2026

Transient Charge Collection in Ultra-Thin SiC Membranes for Single-Ion DetectionEnrico Sangregorio, Alfio Samuele Mancuso, Saverio De Luca, et al.

Materials (Basel, Switzerland)|February 27, 2026

High-Voltage 4H-SiC PiN Diodes: Ion Implantation vs. Epitaxial Growth for Wide-Temperature OperationAlfio Samuele Mancuso, Saverio De Luca, Enrico Sangregorio, et al.

Materials (Basel, Switzerland)|June 13, 2025

Defects Induced by High-Temperature Neutron Irradiation in 250 µm-Thick 4H-SiC p-n Junction DetectorAlfio Samuele Mancuso, Enrico Sangregorio, Annamaria Muoio, et al.

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