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Nature Communications|April 12, 2019
Ultra-fast photodetectors based on high-mobility indium gallium antimonide nanowiresDapan Li, Changyong Lan, Arumugam Manikandan, et al.
Nanoscale Research Letters|November 23, 2012
Large-scale and uniform preparation of pure-phase wurtzite GaAs NWs on non-crystalline substratesNing Han, Jared J Hou, Fengyun Wang, et al.
Nanotechnology|August 23, 2013
Surface roughness induced electron mobility degradation in InAs nanowiresFengyun Wang, SenPo Yip, Ning Han, et al.
Nanoscale Research Letters|April 14, 2016
Growth and Photovoltaic Properties of High-Quality GaAs Nanowires Prepared by the Two-Source CVD MethodYing Wang, Zaixing Yang, Xiaofeng Wu, et al.
ACS Nano|August 18, 2015
Approaching the Hole Mobility Limit of GaSb NanowiresZai-xing Yang, SenPo Yip, Dapan Li, et al.
ACS Applied Materials & Interfaces|November 7, 2014
Polymer-confined colloidal monolayer: a reusable soft photomask for rapid wafer-scale nanopatterningMing Fang, Hao Lin, Ho-Yuen Cheung, et al.
ACS Applied Materials & Interfaces|July 25, 2024
Toward High-Performance Self-Powered Near-Ultraviolet Photodetection by Constructing a Unipolar HeterojunctionJunchen Wan, Jie Zhang, Fengjing Liu, et al.
Scientific Reports|September 13, 2016
Diameter Dependence of Planar Defects in InP NanowiresFengyun Wang, Chao Wang, Yiqian Wang, et al.
ACS Nano|June 18, 2015
Modulating Electrical Properties of InAs Nanowires via Molecular MonolayersHo-Yuen Cheung, SenPo Yip, Ning Han, et al.
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