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Applied Optics|September 14, 2023
Uncertainty evaluation of photoluminescence quantum yield measurement in an integrating hemisphere-based instrumentJaekak Yoo, Jinhwa Gene, Jaeseok Kim, et al.
Micron (Oxford, England : 1993)|May 18, 2005
Nanomanipulator-assisted fabrication and characterization of carbon nanotubes inside scanning electron microscopeSeong Chu Lim, Keun Soo Kim, Im Bok Lee, et al.
ACS Applied Materials & Interfaces|September 2, 2021
Quasi-2D Halide Perovskite Memory Device Formed by Acid-Base Binary Ligand Solution Composed of Oleylamine and Oleic AcidHyeon Jun Jeong, Chulho Park, Hobeom Jeon, et al.
Nano Letters|February 9, 2018
Unsaturated Drift Velocity of Monolayer GrapheneHee Jun Shin, Jaesu Kim, Sungho Kim, et al.
ACS Nano|April 4, 2012
Interfacial thermal conductance observed to be higher in semiconducting than metallic carbon nanotubesStephen Dongmin Kang, Seong Chu Lim, Eui-Sup Lee, et al.
ACS Applied Materials & Interfaces|October 27, 2017
Transient Carrier Cooling Enhanced by Grain Boundaries in Graphene MonolayerHee Jun Shin, Jaesu Kim, Seongho Kim, et al.
Nanoscale|June 28, 2018
Parameter control for enhanced peak-to-valley current ratio in a MoS2/MoTe2 van der Waals heterostructureNgoc Thanh Duong, Seungho Bang, Seung Mi Lee, et al.
ACS Applied Materials & Interfaces|July 1, 2016
Suppression of Interfacial Current Fluctuation in MoTe2 Transistors with Different DielectricsHyunjin Ji, Min-Kyu Joo, Yoojoo Yun, et al.
ACS Applied Materials & Interfaces|January 18, 2017
Understanding Coulomb Scattering Mechanism in Monolayer MoS2 Channel in the Presence of h-BN Buffer LayerMin-Kyu Joo, Byoung Hee Moon, Hyunjin Ji, et al.
Nano Letters|September 21, 2016
Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS2/h-BN HeterostructureMin-Kyu Joo, Byoung Hee Moon, Hyunjin Ji, et al.
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