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Seong-Hwan Ryu

Showing results (1-10 of 5) with videos related to

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ACS Applied Materials & Interfaces|March 15, 2024
<i>C</i>-Axis Aligned Composite InZnO via Thermal Atomic Layer Deposition for 3D Nanostructured SemiconductorHye-Mi Kim, Seong-Hwan Ryu, Sangwook Kim, et al.
Nano-Micro Letters|January 4, 2026
Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and ChallengesChi-Hoon Lee, Seong-Hwan Ryu, Taewon Hwang, et al.
ACS Applied Materials & Interfaces|January 22, 2026
Cocktail Precursor Approach for Homogeneous ALD InGaO Film Growth Overcoming Limits of Mobility-Reliability Trade-Off in Oxide SemiconductorsSeong-Hwan Ryu, Dong-Gyu Kim, Haklim Koo, et al.
Nano Letters|December 5, 2024
High-Temperature Stable Amorphous Sn-Rich InSnGaO Thin Films Fabricated Via Atomic Layer Deposition for Next-Generation Dynamic Random-Access Memory ApplicationsSeong-Hwan Ryu, Hye-Mi Kim, Kwang-Hee Lee, et al.
Nano Letters|January 17, 2024
<i>c</i>-Axis Aligned 3 nm Thick In<sub>2</sub>O<sub>3</sub> Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-offSu-Hwan Choi, Seong-Hwan Ryu, Dong-Gyu Kim, et al.
Pageof 1

Showing results (1-10 of 5) with videos related to

Sort By:
Pageof 1
ACS Applied Materials & Interfaces|March 15, 2024
<i>C</i>-Axis Aligned Composite InZnO via Thermal Atomic Layer Deposition for 3D Nanostructured SemiconductorHye-Mi Kim, Seong-Hwan Ryu, Sangwook Kim, et al.
Nano-Micro Letters|January 4, 2026
Oxide Semiconductor for Advanced Memory Architectures: Atomic Layer Deposition, Key Requirement and ChallengesChi-Hoon Lee, Seong-Hwan Ryu, Taewon Hwang, et al.
ACS Applied Materials & Interfaces|January 22, 2026
Cocktail Precursor Approach for Homogeneous ALD InGaO Film Growth Overcoming Limits of Mobility-Reliability Trade-Off in Oxide SemiconductorsSeong-Hwan Ryu, Dong-Gyu Kim, Haklim Koo, et al.
Nano Letters|December 5, 2024
High-Temperature Stable Amorphous Sn-Rich InSnGaO Thin Films Fabricated Via Atomic Layer Deposition for Next-Generation Dynamic Random-Access Memory ApplicationsSeong-Hwan Ryu, Hye-Mi Kim, Kwang-Hee Lee, et al.
Nano Letters|January 17, 2024
<i>c</i>-Axis Aligned 3 nm Thick In<sub>2</sub>O<sub>3</sub> Crystal Using New Liquid DBADMIn Precursor for Highly Scaled FET Beyond the Mobility-Stability Trade-offSu-Hwan Choi, Seong-Hwan Ryu, Dong-Gyu Kim, et al.
Pageof 1