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Seungmin Yeo

Showing results (1-10 of 4) with videos related to

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ACS Applied Materials & Interfaces|February 2, 2019
Fully "Erase-free" Multi-Bit Operation in HfO<sub>2</sub>-Based Resistive Switching DeviceJin Joo Ryu, Kanghyeok Jeon, Seungmin Yeo, et al.
ACS Applied Materials & Interfaces|November 4, 2017
Highly Uniform Atomic Layer-Deposited MoS<sub>2</sub>@3D-Ni-Foam: A Novel Approach To Prepare an Electrode for SupercapacitorsDip K Nandi, Sumanta Sahoo, Soumyadeep Sinha, et al.
Inorganic Chemistry|March 20, 2023
Amidoxime-Containing Ti Precursors for Atomic Layer Deposition of TiN Thin Films with Suppressed Columnar MicrostructureGa Yeon Lee, Seungmin Yeo, Chan-Mi Cho, et al.
Inorganic Chemistry|November 23, 2021
Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin FilmsGa Yeon Lee, Seungmin Yeo, Seong Ho Han, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
ACS Applied Materials & Interfaces|February 2, 2019
Fully "Erase-free" Multi-Bit Operation in HfO<sub>2</sub>-Based Resistive Switching DeviceJin Joo Ryu, Kanghyeok Jeon, Seungmin Yeo, et al.
ACS Applied Materials & Interfaces|November 4, 2017
Highly Uniform Atomic Layer-Deposited MoS<sub>2</sub>@3D-Ni-Foam: A Novel Approach To Prepare an Electrode for SupercapacitorsDip K Nandi, Sumanta Sahoo, Soumyadeep Sinha, et al.
Inorganic Chemistry|March 20, 2023
Amidoxime-Containing Ti Precursors for Atomic Layer Deposition of TiN Thin Films with Suppressed Columnar MicrostructureGa Yeon Lee, Seungmin Yeo, Chan-Mi Cho, et al.
Inorganic Chemistry|November 23, 2021
Group IV Transition Metal (M = Zr, Hf) Precursors for High-κ Metal Oxide Thin FilmsGa Yeon Lee, Seungmin Yeo, Seong Ho Han, et al.
Pageof 1