Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Filters

Shahriar Memaran

Showing results (1-10 of 10) with videos related to

Pageof 1
Sort By:
Nature|January 5, 2018
One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxyPrasana K Sahoo, Shahriar Memaran, Yan Xin, et al.
ACS Nano|July 10, 2014
Ambipolar molybdenum diselenide field-effect transistors: field-effect and Hall mobilitiesNihar R Pradhan, Daniel Rhodes, Yan Xin, et al.
ACS Nano|June 1, 2014
Field-effect transistors based on few-layered α-MoTe(2)Nihar R Pradhan, Daniel Rhodes, Simin Feng, et al.
Nano Letters|March 19, 2024
Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum WellsDmitry Shcherbakov, Greyson Voigt, Shahriar Memaran, et al.
ACS Nano|September 19, 2019
Bilayer Lateral Heterostructures of Transition-Metal Dichalcogenides and Their Optoelectronic ResponsePrasana Kumar Sahoo, Shahriar Memaran, Florence Ann Nugera, et al.
Nano Letters|October 30, 2015
Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-JunctionsShahriar Memaran, Nihar R Pradhan, Zhengguang Lu, et al.
Scientific Reports|August 26, 2018
Phase Modulators Based on High Mobility Ambipolar ReSe<sub>2</sub> Field-Effect TransistorsNihar R Pradhan, Carlos Garcia, Bridget Isenberg, et al.
Science Advances|January 30, 2021
Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductorDmitry Shcherbakov, Petr Stepanov, Shahriar Memaran, et al.
Nature Communications|July 7, 2022
Light sources with bias tunable spectrum based on van der Waals interface transistorsHugo Henck, Diego Mauro, Daniil Domaretskiy, et al.
ACS Nano|October 18, 2022
Thickness- and Twist-Angle-Dependent Interlayer Excitons in Metal Monochalcogenide HeterostructuresWenkai Zheng, Li Xiang, Felipe A de Quesada, et al.
Pageof 1

Showing results (1-10 of 10) with videos related to

Sort By:
Pageof 1
Nature|January 5, 2018
One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxyPrasana K Sahoo, Shahriar Memaran, Yan Xin, et al.
ACS Nano|July 10, 2014
Ambipolar molybdenum diselenide field-effect transistors: field-effect and Hall mobilitiesNihar R Pradhan, Daniel Rhodes, Yan Xin, et al.
ACS Nano|June 1, 2014
Field-effect transistors based on few-layered α-MoTe(2)Nihar R Pradhan, Daniel Rhodes, Simin Feng, et al.
Nano Letters|March 19, 2024
Giant Tunability of Intersubband Transitions and Quantum Hall Quartets in Few-Layer InSe Quantum WellsDmitry Shcherbakov, Greyson Voigt, Shahriar Memaran, et al.
ACS Nano|September 19, 2019
Bilayer Lateral Heterostructures of Transition-Metal Dichalcogenides and Their Optoelectronic ResponsePrasana Kumar Sahoo, Shahriar Memaran, Florence Ann Nugera, et al.
Nano Letters|October 30, 2015
Pronounced Photovoltaic Response from Multilayered Transition-Metal Dichalcogenides PN-JunctionsShahriar Memaran, Nihar R Pradhan, Zhengguang Lu, et al.
Scientific Reports|August 26, 2018
Phase Modulators Based on High Mobility Ambipolar ReSe<sub>2</sub> Field-Effect TransistorsNihar R Pradhan, Carlos Garcia, Bridget Isenberg, et al.
Science Advances|January 30, 2021
Layer- and gate-tunable spin-orbit coupling in a high-mobility few-layer semiconductorDmitry Shcherbakov, Petr Stepanov, Shahriar Memaran, et al.
Nature Communications|July 7, 2022
Light sources with bias tunable spectrum based on van der Waals interface transistorsHugo Henck, Diego Mauro, Daniil Domaretskiy, et al.
ACS Nano|October 18, 2022
Thickness- and Twist-Angle-Dependent Interlayer Excitons in Metal Monochalcogenide HeterostructuresWenkai Zheng, Li Xiang, Felipe A de Quesada, et al.
Pageof 1