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Shaoying Ke

Showing results (11-20 of 25) with videos related to

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Optics Express|February 20, 2026
Microcrystalline Ge interlayer-bonded InGaAs/Si avalanche photodiode with ultrahigh responsivity of 135 A/W and gain of 190Menghui Guo, Xiaolong Jiang, Jie Wang, et al.
Experimental and Therapeutic Medicine|September 7, 2018
Clinical significance of circulating tumor cells via combined whole exome sequencing in early stage cancer screening: A case reportZijian Su, Jiangman Zhao, Shaoying Ke, et al.
Optics Letters|October 15, 2025
Broadband (300-2200 nm) all-Si Schottky photodetector with ultralow dark current for NIR communication and imaging applicationsYongkang Ge, Meihua Yang, Junfeng Yang, et al.
Applied Optics|October 20, 2017
Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiodeShaoying Ke, Shaoming Lin, Danfeng Mao, et al.
ACS Applied Materials & Interfaces|August 5, 2024
High-Speed Self-Powered PdSe<sub>2</sub>/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe<sub>2</sub> Quantum Island StructureShaopeng Chen, Shaoying Ke, Tian Ji, et al.
ACS Applied Materials & Interfaces|May 12, 2025
Selenization Mechanism of Nearly 4 in. Single-Oriented PtSe<sub>2</sub> and PtSe<sub>2</sub>/n<sup>-</sup>-Si/n<sup>+</sup>-Si 2D-3D PIN Wide-Spectrum Polarization DetectorsXiaojia Xu, Zhiming Li, Mengyu Ge, et al.
Applied Optics|May 3, 2023
Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detectorXiaoqiang Chen, Jinlong Jiao, Liqiang Yao, et al.
Optics Express|January 29, 2025
Fabrication of a high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayerJiahui Li, Wenhao Meng, Zhanren Wang, et al.
ACS Applied Materials & Interfaces|August 18, 2025
Quantum-Confined 0D/2D/3D Heterostructure Photodetectors with an Ultrafast Self-Powered Broadband Response for Short-Wave Infrared ImagingBin Liu, Yiliang Chen, Mengyu Ge, et al.
ACS Applied Materials & Interfaces|January 2, 2025
Stable Self-Powered Broadband PtSe<sub>2</sub>/Si Pin Infrared Photodetector Based on a High-Quality Ultrapure Intrinsic Si Film Exfoliated by Si/SOI Wafer BondingXiaojia Xu, Shaoqiu Ke, Tian Ji, et al.
Pageof 3

Showing results (11-20 of 25) with videos related to

Sort By:
Pageof 3
Optics Express|February 20, 2026
Microcrystalline Ge interlayer-bonded InGaAs/Si avalanche photodiode with ultrahigh responsivity of 135 A/W and gain of 190Menghui Guo, Xiaolong Jiang, Jie Wang, et al.
Experimental and Therapeutic Medicine|September 7, 2018
Clinical significance of circulating tumor cells via combined whole exome sequencing in early stage cancer screening: A case reportZijian Su, Jiangman Zhao, Shaoying Ke, et al.
Optics Letters|October 15, 2025
Broadband (300-2200 nm) all-Si Schottky photodetector with ultralow dark current for NIR communication and imaging applicationsYongkang Ge, Meihua Yang, Junfeng Yang, et al.
Applied Optics|October 20, 2017
Design of wafer-bonded structures for near room temperature Geiger-mode operation of germanium on silicon single-photon avalanche photodiodeShaoying Ke, Shaoming Lin, Danfeng Mao, et al.
ACS Applied Materials & Interfaces|August 5, 2024
High-Speed Self-Powered PdSe<sub>2</sub>/Si 2D-3D PIN-like Photodetector with Broadband Response Based on PdSe<sub>2</sub> Quantum Island StructureShaopeng Chen, Shaoying Ke, Tian Ji, et al.
ACS Applied Materials & Interfaces|May 12, 2025
Selenization Mechanism of Nearly 4 in. Single-Oriented PtSe<sub>2</sub> and PtSe<sub>2</sub>/n<sup>-</sup>-Si/n<sup>+</sup>-Si 2D-3D PIN Wide-Spectrum Polarization DetectorsXiaojia Xu, Zhiming Li, Mengyu Ge, et al.
Applied Optics|May 3, 2023
Effect of the bonding layer and multigrading layers on the performance of a wafer-bonded InGaAs/Si single-photon detectorXiaoqiang Chen, Jinlong Jiao, Liqiang Yao, et al.
Optics Express|January 29, 2025
Fabrication of a high-performance Ge/Si PIN photodetector utilizing Ge/Si hetero-bonding with a microcrystalline Ge interlayerJiahui Li, Wenhao Meng, Zhanren Wang, et al.
ACS Applied Materials & Interfaces|August 18, 2025
Quantum-Confined 0D/2D/3D Heterostructure Photodetectors with an Ultrafast Self-Powered Broadband Response for Short-Wave Infrared ImagingBin Liu, Yiliang Chen, Mengyu Ge, et al.
ACS Applied Materials & Interfaces|January 2, 2025
Stable Self-Powered Broadband PtSe<sub>2</sub>/Si Pin Infrared Photodetector Based on a High-Quality Ultrapure Intrinsic Si Film Exfoliated by Si/SOI Wafer BondingXiaojia Xu, Shaoqiu Ke, Tian Ji, et al.
Pageof 3