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Shenglei Zhao

Showing results (1-10 of 6) with videos related to

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Sensors (Basel, Switzerland)|October 14, 2023
Incipient Fault Detection in a Hydraulic System Using Canonical Variable Analysis Combined with Adaptive Kernel Density EstimationJinxin Wang, Shenglei Zhao, Enyuan Wang, et al.
Micromachines|January 8, 2025
Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator StructureLu Hao, Zhihong Liu, Hanghai Du, et al.
Scientific Reports|April 29, 2025
PFVnet, a feature enhancement network for low recognition coal and rock imagesCai Han, Zhenwen Liu, Shenglei Zhao, et al.
Micromachines|November 27, 2024
High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon SubstrateYinhe Wu, Xingchi Ma, Longyang Yu, et al.
Nanotechnology|February 17, 2026
High-performance GaN HEMTs with over 2 MV/cm breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructureWenjun Liu, Yachao Zhang, Zhizhe Wang, et al.
Micromachines|January 8, 2025
750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice LayersShuzhen You, Yilong Lei, Liang Wang, et al.
Pageof 1

Showing results (1-10 of 6) with videos related to

Sort By:
Pageof 1
Sensors (Basel, Switzerland)|October 14, 2023
Incipient Fault Detection in a Hydraulic System Using Canonical Variable Analysis Combined with Adaptive Kernel Density EstimationJinxin Wang, Shenglei Zhao, Enyuan Wang, et al.
Micromachines|January 8, 2025
Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator StructureLu Hao, Zhihong Liu, Hanghai Du, et al.
Scientific Reports|April 29, 2025
PFVnet, a feature enhancement network for low recognition coal and rock imagesCai Han, Zhenwen Liu, Shenglei Zhao, et al.
Micromachines|November 27, 2024
High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon SubstrateYinhe Wu, Xingchi Ma, Longyang Yu, et al.
Nanotechnology|February 17, 2026
High-performance GaN HEMTs with over 2 MV/cm breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructureWenjun Liu, Yachao Zhang, Zhizhe Wang, et al.
Micromachines|January 8, 2025
750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice LayersShuzhen You, Yilong Lei, Liang Wang, et al.
Pageof 1