Search research articles
Contact Us
Filters
Showing results (1-10 of 6) with videos related to
Page
of 1
Sort By:
Sensors (Basel, Switzerland)
|
October 14, 2023
Incipient Fault Detection in a Hydraulic System Using Canonical Variable Analysis Combined with Adaptive Kernel Density Estimation
Jinxin Wang, Shenglei Zhao, Enyuan Wang, et al.
Micromachines
|
January 8, 2025
Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure
Lu Hao, Zhihong Liu, Hanghai Du, et al.
Scientific Reports
|
April 29, 2025
PFVnet, a feature enhancement network for low recognition coal and rock images
Cai Han, Zhenwen Liu, Shenglei Zhao, et al.
Micromachines
|
November 27, 2024
High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate
Yinhe Wu, Xingchi Ma, Longyang Yu, et al.
Nanotechnology
|
February 17, 2026
High-performance GaN HEMTs with over 2 MV/cm breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructure
Wenjun Liu, Yachao Zhang, Zhizhe Wang, et al.
Micromachines
|
January 8, 2025
750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers
Shuzhen You, Yilong Lei, Liang Wang, et al.
Page
of 1
Search research articles
Search
Showing results (1-10 of 6) with videos related to
Sort By:
Page
of 1
Sensors (Basel, Switzerland)
|
October 14, 2023
Incipient Fault Detection in a Hydraulic System Using Canonical Variable Analysis Combined with Adaptive Kernel Density Estimation
Jinxin Wang, Shenglei Zhao, Enyuan Wang, et al.
Micromachines
|
January 8, 2025
Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure
Lu Hao, Zhihong Liu, Hanghai Du, et al.
Scientific Reports
|
April 29, 2025
PFVnet, a feature enhancement network for low recognition coal and rock images
Cai Han, Zhenwen Liu, Shenglei Zhao, et al.
Micromachines
|
November 27, 2024
High-Temperature Characterization of AlGaN Channel High Electron Mobility Transistor Based on Silicon Substrate
Yinhe Wu, Xingchi Ma, Longyang Yu, et al.
Nanotechnology
|
February 17, 2026
High-performance GaN HEMTs with over 2 MV/cm breakdown field and 73% PAE via an AlN super back barrier/ultra-thin GaN channel heterostructure
Wenjun Liu, Yachao Zhang, Zhizhe Wang, et al.
Micromachines
|
January 8, 2025
750 V Breakdown in GaN Buffer on 200 mm SOI Substrates Using Reverse-Stepped Superlattice Layers
Shuzhen You, Yilong Lei, Liang Wang, et al.
Page
of 1