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Shui-Qing Yu

Showing results (21-30 of 33) with videos related to

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Scientific Reports|April 6, 2018
Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy GrowthWei Dou, Mourad Benamara, Aboozar Mosleh, et al.
Nanomaterials (Basel, Switzerland)|June 13, 2024
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam EpitaxyCalbi Gunder, Mohammad Zamani-Alavijeh, Emmanuel Wangila, et al.
Materials (Basel, Switzerland)|December 24, 2021
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7Joshua Grant, Grey Abernathy, Oluwatobi Olorunsola, et al.
Scientific Reports|October 3, 2019
Ge<sub>1-x</sub>Sn<sub>x</sub> alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentrationTimothy D Eales, Igor P Marko, Stefan Schulz, et al.
Optics Letters|October 2, 2018
Optically pumped lasing at 3  μm from compositionally graded GeSn with tin up to 22.3Wei Dou, Yiyin Zhou, Joe Margetis, et al.
Nanoscale|August 5, 2025
Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloysSerhiy V Kondratenko, Peter M Lytvyn, Fernando M de Oliveira, et al.
RSC Advances|January 4, 2024
The growth of Ge and direct bandgap Ge<sub>1-</sub>Sn<sub></sub> on GaAs (001) by molecular beam epitaxyCalbi Gunder, Fernando Maia de Oliveira, Emmanuel Wangila, et al.
Nanotechnology|September 8, 2018
Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinementPerry C Grant, Joe Margetis, Wei Du, et al.
Nanotechnology|November 11, 2021
Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emissionOluwatobi Olorunsola, Solomon Ojo, Grey Abernathy, et al.
Crystal Growth & Design|July 6, 2026
Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge<sub>0.85</sub>Sn<sub>0.15</sub> on Ge(001)Dinesh Baral, Nirosh M Eldose, Diandian Zhang, et al.
Pageof 4

Showing results (21-30 of 33) with videos related to

Sort By:
Pageof 4
Scientific Reports|April 6, 2018
Investigation of GeSn Strain Relaxation and Spontaneous Composition Gradient for Low-Defect and High-Sn Alloy GrowthWei Dou, Mourad Benamara, Aboozar Mosleh, et al.
Nanomaterials (Basel, Switzerland)|June 13, 2024
Algorithm-Based Linearly Graded Compositions of GeSn on GaAs (001) via Molecular Beam EpitaxyCalbi Gunder, Mohammad Zamani-Alavijeh, Emmanuel Wangila, et al.
Materials (Basel, Switzerland)|December 24, 2021
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7Joshua Grant, Grey Abernathy, Oluwatobi Olorunsola, et al.
Scientific Reports|October 3, 2019
Ge<sub>1-x</sub>Sn<sub>x</sub> alloys: Consequences of band mixing effects for the evolution of the band gap Γ-character with Sn concentrationTimothy D Eales, Igor P Marko, Stefan Schulz, et al.
Optics Letters|October 2, 2018
Optically pumped lasing at 3  μm from compositionally graded GeSn with tin up to 22.3Wei Dou, Yiyin Zhou, Joe Margetis, et al.
Nanoscale|August 5, 2025
Tip-induced nanoscale engineering of surface potential and conductivity in GeSn alloysSerhiy V Kondratenko, Peter M Lytvyn, Fernando M de Oliveira, et al.
RSC Advances|January 4, 2024
The growth of Ge and direct bandgap Ge<sub>1-</sub>Sn<sub></sub> on GaAs (001) by molecular beam epitaxyCalbi Gunder, Fernando Maia de Oliveira, Emmanuel Wangila, et al.
Nanotechnology|September 8, 2018
Study of direct bandgap type-I GeSn/GeSn double quantum well with improved carrier confinementPerry C Grant, Joe Margetis, Wei Du, et al.
Nanotechnology|November 11, 2021
Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emissionOluwatobi Olorunsola, Solomon Ojo, Grey Abernathy, et al.
Crystal Growth & Design|July 6, 2026
Strain Relaxation and Relative Defect Density with Thickness in MBE-Grown Ge<sub>0.85</sub>Sn<sub>0.15</sub> on Ge(001)Dinesh Baral, Nirosh M Eldose, Diandian Zhang, et al.
Pageof 4