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ACS Applied Materials & Interfaces|March 25, 2024
Effect and Regulation Mechanism of Post-deposition Annealing on the Ferroelectric Properties of AlScN Thin FilmsMingrui Liu, Hang Zang, Yuping Jia, et al.
ACS Applied Materials & Interfaces|September 20, 2024
Solving the Asymmetric Doping for Wide-Gap Semiconductors by Host Functionalization: Quantum Engineering StrategyXiaobao Ma, Zhiming Shi, Hang Zang, et al.
Light, Science & Applications|March 30, 2024
Nonvolatile and reconfigurable two-terminal electro-optic duplex memristor based on III-nitride semiconductorsZhiwei Xie, Ke Jiang, Shanli Zhang, et al.
Light, Science & Applications|June 30, 2025
Phase-pure ferroelectric quantum wells with tunable photoluminescence for multi-state optoelectronic applicationsRui Sun, Yuping Jia, Bo Lai, et al.
Advanced Materials (Deerfield Beach, Fla.)|March 26, 2025
Ultraviolet Optoelectronic Synapse Based on AlScN/p-i-n GaN Heterojunction for Advanced Artificial Vision SystemsZhiwei Xie, Ke Jiang, Shanli Zhang, et al.
Nanoscale Advances|January 18, 2024
The AlN lattice-polarity inversion in a high-temperature-annealed <i>c</i>-oriented AlN/sapphire originated from the diffusion of Al and O atoms from sapphireKe Jiang, Jianwei Ben, Xiaojuan Sun, et al.
Small (Weinheim an Der Bergstrasse, Germany)|May 12, 2025
Efficient n-Type Doping of Hexagonal Boron Nitride via Localized Band-Offset Compensation StrategyXiaobao Ma, Zhiming Shi, Hang Zang, et al.
Physical Review Letters|July 31, 2025
Overcoming Asymmetric Carrier Injection in III-Nitride Light-Emitting Diodes through Defect EngineeringYuxin Yang, Zhiming Shi, Shunpeng Lv, et al.
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