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Siddheswar Maikap

Showing results (11-20 of 29) with videos related to

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Nano-Micro Letters|November 23, 2018
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO <sub></sub> /TiO <sub></sub> /TiN StructureDebanjan Jana, Subhranu Samanta, Sourav Roy, et al.
Analytical Chemistry|May 14, 2020
Sarcosine Prostate Cancer Biomarker Detection by Controlling Oxygen in NiO<sub></sub> Membrane on Vertical Silicon Nanowires in Electrolyte-Insulator-Nanowire StructureAnisha Roy, Yi-Pin Chen, Jiantai Timothy Qiu, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|February 23, 2019
Controlling Resistive Switching by Using an Optimized MoS<sub>2</sub> Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaO <sub>x</sub>-Based RRAMJiantai Timothy Qiu, Subhranu Samanta, Mrinmoy Dutta, et al.
Nanoscale Research Letters|September 9, 2016
Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W StructureSomsubhra Chakrabarti, Subhranu Samanta, Siddheswar Maikap, et al.
Nanoscale Research Letters|September 10, 2013
Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materialsAmit Prakash, Siddheswar Maikap, Writam Banerjee, et al.
Nanoscale Research Letters|May 3, 2014
Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interfaceAmit Prakash, Siddheswar Maikap, Hsien-Chin Chiu, et al.
Physical Chemistry Chemical Physics : PCCP|September 22, 2017
Scalable cross-point resistive switching memory and mechanism through an understanding of H<sub>2</sub>O<sub>2</sub>/glucose sensing using an IrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/W structureSomsubhra Chakrabarti, Siddheswar Maikap, Subhranu Samanta, et al.
Nanoscale Research Letters|November 16, 2013
Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interfaceAmit Prakash, Siddheswar Maikap, Hsien-Chin Chiu, et al.
ACS Applied Materials & Interfaces|April 1, 2026
Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral (<i>R3</i>) Hafnia Derived from the Fluorite Phase for Low-Coercive Ferroelectric MemoryMochamad Januar, Cheng-Hong Liu, Abhijit Aich, et al.
Nanoscale Research Letters|January 10, 2014
Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memoriesDebanjan Jana, Siddheswar Maikap, Amit Prakash, et al.
Pageof 3

Showing results (11-20 of 29) with videos related to

Sort By:
Pageof 3
Nano-Micro Letters|November 23, 2018
Observation of Resistive Switching Memory by Reducing Device Size in a New Cr/CrO <sub></sub> /TiO <sub></sub> /TiN StructureDebanjan Jana, Subhranu Samanta, Sourav Roy, et al.
Analytical Chemistry|May 14, 2020
Sarcosine Prostate Cancer Biomarker Detection by Controlling Oxygen in NiO<sub></sub> Membrane on Vertical Silicon Nanowires in Electrolyte-Insulator-Nanowire StructureAnisha Roy, Yi-Pin Chen, Jiantai Timothy Qiu, et al.
Langmuir : the ACS Journal of Surfaces and Colloids|February 23, 2019
Controlling Resistive Switching by Using an Optimized MoS<sub>2</sub> Interfacial Layer and the Role of Top Electrodes on Ascorbic Acid Sensing in TaO <sub>x</sub>-Based RRAMJiantai Timothy Qiu, Subhranu Samanta, Mrinmoy Dutta, et al.
Nanoscale Research Letters|September 9, 2016
Temperature-Dependent Non-linear Resistive Switching Characteristics and Mechanism Using a New W/WO3/WOx/W StructureSomsubhra Chakrabarti, Subhranu Samanta, Siddheswar Maikap, et al.
Nanoscale Research Letters|September 10, 2013
Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materialsAmit Prakash, Siddheswar Maikap, Writam Banerjee, et al.
Nanoscale Research Letters|May 3, 2014
Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaO x interfaceAmit Prakash, Siddheswar Maikap, Hsien-Chin Chiu, et al.
Physical Chemistry Chemical Physics : PCCP|September 22, 2017
Scalable cross-point resistive switching memory and mechanism through an understanding of H<sub>2</sub>O<sub>2</sub>/glucose sensing using an IrO<sub>x</sub>/Al<sub>2</sub>O<sub>3</sub>/W structureSomsubhra Chakrabarti, Siddheswar Maikap, Subhranu Samanta, et al.
Nanoscale Research Letters|November 16, 2013
Retraction: Enhanced resistive switching memory characteristics and mechanism using a Ti nanolayer at the W/TaOx interfaceAmit Prakash, Siddheswar Maikap, Hsien-Chin Chiu, et al.
ACS Applied Materials & Interfaces|April 1, 2026
Symmetry-Guided Functional Pathways of Intercalation-Free Rhombohedral (<i>R3</i>) Hafnia Derived from the Fluorite Phase for Low-Coercive Ferroelectric MemoryMochamad Januar, Cheng-Hong Liu, Abhijit Aich, et al.
Nanoscale Research Letters|January 10, 2014
Enhanced resistive switching phenomena using low-positive-voltage format and self-compliance IrOx/GdOx/W cross-point memoriesDebanjan Jana, Siddheswar Maikap, Amit Prakash, et al.
Pageof 3