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Nanoscale
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March 19, 2015
Bipolar resistive switching behavior of an amorphous Ge₂Sb₂Te₅ thin films with a Te layer
Sijung Yoo, Taeyong Eom, Taehong Gwon, et al.
ACS Applied Materials & Interfaces
|
August 9, 2018
Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO<sub>2</sub>/Ti/Pt Nanosized ReRAM Devices
Hehe Zhang, Sijung Yoo, Stephan Menzel, et al.
Nanoscale
|
June 9, 2015
Electronic resistance switching in the Al/TiO(x)/Al structure for forming-free and area-scalable memory
Xing Long Shao, Li Wei Zhou, Kyung Jean Yoon, et al.
Scientific Reports
|
October 7, 2015
Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong
An Quan Jiang, Xiang Jian Meng, David Wei Zhang, et al.
ACS Applied Materials & Interfaces
|
November 8, 2017
Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition
Taehong Gwon, Ahmed Yousef Mohamed, Chanyoung Yoo, et al.
Scientific Reports
|
February 3, 2016
Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases
Woongkyu Lee, Sijung Yoo, Kyung Jean Yoon, et al.
ACS Applied Materials & Interfaces
|
November 18, 2014
Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ film
Woojin Jeon, Sijung Yoo, Hyo Kyeom Kim, et al.
Nature Communications
|
July 27, 2025
Ferroelectric NAND for efficient hardware bayesian neural networks
Minsuk Song, Ryun-Han Koo, Jangsaeng Kim, et al.
Nanotechnology
|
June 20, 2018
Atomic layer deposition of GeSe films using HGeCl<sub>3</sub> and [(CH<sub>3</sub>)<sub>3</sub>Si]<sub>2</sub>Se with the discrete feeding method for the ovonic threshold switch
Woohyun Kim, Sijung Yoo, Chanyoung Yoo, et al.
ACS Applied Materials & Interfaces
|
June 28, 2016
Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area
Jung Ho Yoon, Sijung Yoo, Seul Ji Song, et al.
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Search research articles
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Showing results (1-10 of 12) with videos related to
Sort By:
Page
of 2
Nanoscale
|
March 19, 2015
Bipolar resistive switching behavior of an amorphous Ge₂Sb₂Te₅ thin films with a Te layer
Sijung Yoo, Taeyong Eom, Taehong Gwon, et al.
ACS Applied Materials & Interfaces
|
August 9, 2018
Understanding the Coexistence of Two Bipolar Resistive Switching Modes with Opposite Polarity in Pt/TiO<sub>2</sub>/Ti/Pt Nanosized ReRAM Devices
Hehe Zhang, Sijung Yoo, Stephan Menzel, et al.
Nanoscale
|
June 9, 2015
Electronic resistance switching in the Al/TiO(x)/Al structure for forming-free and area-scalable memory
Xing Long Shao, Li Wei Zhou, Kyung Jean Yoon, et al.
Scientific Reports
|
October 7, 2015
Giant Dielectric Permittivity in Ferroelectric Thin Films: Domain Wall Ping Pong
An Quan Jiang, Xiang Jian Meng, David Wei Zhang, et al.
ACS Applied Materials & Interfaces
|
November 8, 2017
Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition
Taehong Gwon, Ahmed Yousef Mohamed, Chanyoung Yoo, et al.
Scientific Reports
|
February 3, 2016
Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases
Woongkyu Lee, Sijung Yoo, Kyung Jean Yoon, et al.
ACS Applied Materials & Interfaces
|
November 18, 2014
Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ film
Woojin Jeon, Sijung Yoo, Hyo Kyeom Kim, et al.
Nature Communications
|
July 27, 2025
Ferroelectric NAND for efficient hardware bayesian neural networks
Minsuk Song, Ryun-Han Koo, Jangsaeng Kim, et al.
Nanotechnology
|
June 20, 2018
Atomic layer deposition of GeSe films using HGeCl<sub>3</sub> and [(CH<sub>3</sub>)<sub>3</sub>Si]<sub>2</sub>Se with the discrete feeding method for the ovonic threshold switch
Woohyun Kim, Sijung Yoo, Chanyoung Yoo, et al.
ACS Applied Materials & Interfaces
|
June 28, 2016
Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2-x Structure with a Sub-μm(2) Cell Area
Jung Ho Yoon, Sijung Yoo, Seul Ji Song, et al.
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of 2