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Skierbiszewski

Showing results (1-10 of 22) with videos related to

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Physical Review. B, Condensed Matter|November 15, 1995
Barrier between localized and shallow neutral donor states in GaAs:GeSkierbiszewski, Jantsch, Wilamowski, et al.
ACS Applied Materials & Interfaces|January 15, 2025
Lateral Carrier Diffusion in Ion-Implanted Ultra-Small Blue III-Nitride MicroLEDsJulia Slawinska, Grzegorz Muziol, Anna Kafar, et al.
Optics Express|March 4, 2020
Anomalous photocurrent in wide InGaN quantum wellsArtem Bercha, Witold Trzeciakowski, Grzegorz Muzioł, et al.
Nanoscale|November 17, 2022
Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenidesKacper Oreszczuk, Julia Slawinska, Aleksander Rodek, et al.
ACS Photonics|March 24, 2025
Distinctness of Electroluminescence and Optical Gain in Laser Diodes with Wide Polar Quantum WellsMateusz Hajdel, Krzysztof Gołyga, Marcin Siekacz, et al.
Physical Review. B, Condensed Matter|February 15, 1996
Weak antilocalization and spin precession in quantum wellsKnap, Skierbiszewski, Zduniak, et al.
Optics Express|October 29, 2020
Nitride light-emitting diodes for cryogenic temperaturesMikolaj Chlipala, Henryk Turski, Marcin Siekacz, et al.
Physical Chemistry Chemical Physics : PCCP|June 12, 2023
The influence of Fermi level position at the GaN surface on carrier transfer across the MAPbI<sub>3</sub>/GaN interfaceEwelina Zdanowicz, Artur P Herman, Łukasz Przypis, et al.
Optics Express|March 4, 2020
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodesShyam Bharadwaj, Jeffrey Miller, Kevin Lee, et al.
Optics Express|October 14, 2022
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodesJ Slawinska, G Muziol, M Siekacz, et al.
Pageof 3

Showing results (1-10 of 22) with videos related to

Sort By:
Pageof 3
Physical Review. B, Condensed Matter|November 15, 1995
Barrier between localized and shallow neutral donor states in GaAs:GeSkierbiszewski, Jantsch, Wilamowski, et al.
ACS Applied Materials & Interfaces|January 15, 2025
Lateral Carrier Diffusion in Ion-Implanted Ultra-Small Blue III-Nitride MicroLEDsJulia Slawinska, Grzegorz Muziol, Anna Kafar, et al.
Optics Express|March 4, 2020
Anomalous photocurrent in wide InGaN quantum wellsArtem Bercha, Witold Trzeciakowski, Grzegorz Muzioł, et al.
Nanoscale|November 17, 2022
Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenidesKacper Oreszczuk, Julia Slawinska, Aleksander Rodek, et al.
ACS Photonics|March 24, 2025
Distinctness of Electroluminescence and Optical Gain in Laser Diodes with Wide Polar Quantum WellsMateusz Hajdel, Krzysztof Gołyga, Marcin Siekacz, et al.
Physical Review. B, Condensed Matter|February 15, 1996
Weak antilocalization and spin precession in quantum wellsKnap, Skierbiszewski, Zduniak, et al.
Optics Express|October 29, 2020
Nitride light-emitting diodes for cryogenic temperaturesMikolaj Chlipala, Henryk Turski, Marcin Siekacz, et al.
Physical Chemistry Chemical Physics : PCCP|June 12, 2023
The influence of Fermi level position at the GaN surface on carrier transfer across the MAPbI<sub>3</sub>/GaN interfaceEwelina Zdanowicz, Artur P Herman, Łukasz Przypis, et al.
Optics Express|March 4, 2020
Enhanced injection efficiency and light output in bottom tunnel-junction light-emitting diodesShyam Bharadwaj, Jeffrey Miller, Kevin Lee, et al.
Optics Express|October 14, 2022
Ion implantation of tunnel junction as a method for defining the aperture of III-nitride-based micro-light-emitting diodesJ Slawinska, G Muziol, M Siekacz, et al.
Pageof 3