So-Ra Min - JoVE Visualize

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Scientific Reports|August 24, 2022

3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influenceSang Ho Lee, Jin Park, So Ra Min, et al.

Nanomaterials (Basel, Switzerland)|October 14, 2022

Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped StructureHee Dae An, Sang Ho Lee, Jin Park, et al.

Materials (Basel, Switzerland)|February 15, 2022

Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> Dual-Layer InsulatorSo-Ra Min, Min-Su Cho, Sang-Ho Lee, et al.

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Showing results (1-10 of 3) with videos related to

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Scientific Reports|August 24, 2022

3-D stacked polycrystalline-silicon-MOSFET-based capacitorless DRAM with superior immunity to grain-boundary's influenceSang Ho Lee, Jin Park, So Ra Min, et al.

Nanomaterials (Basel, Switzerland)|October 14, 2022

Design of a Capacitorless DRAM Based on a Polycrystalline-Silicon Dual-Gate MOSFET with a Fin-Shaped StructureHee Dae An, Sang Ho Lee, Jin Park, et al.

Materials (Basel, Switzerland)|February 15, 2022

Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO<sub>2</sub>/Si<sub>3</sub>N<sub>4</sub> Dual-Layer InsulatorSo-Ra Min, Min-Su Cho, Sang-Ho Lee, et al.

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