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Scientific Reports|October 29, 2023
Study of all-group-IV SiGeSn mid-IR lasers with dual wavelength emissionGrey Abernathy, Solomon Ojo, Abdulla Said, et al.
Optics Letters|May 24, 2023
Investigation of the cap layer for improved GeSn multiple quantum well laser performanceGrey Abernathy, Solomon Ojo, Hryhorii Stanchu, et al.
Materials (Basel, Switzerland)|December 24, 2021
Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7Joshua Grant, Grey Abernathy, Oluwatobi Olorunsola, et al.
RSC Advances|January 4, 2024
The growth of Ge and direct bandgap Ge<sub>1-</sub>Sn<sub></sub> on GaAs (001) by molecular beam epitaxyCalbi Gunder, Fernando Maia de Oliveira, Emmanuel Wangila, et al.
Nanotechnology|November 11, 2021
Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emissionOluwatobi Olorunsola, Solomon Ojo, Grey Abernathy, et al.
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