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Scientific Reports|January 6, 2026
Influence of metal-semiconductor interface treatments and absorber structure on the performance and reliability of uni-traveling-carrier photodiodes (UTC-PDs)Soo Cheol Kang, Jin Chul Cho, Eui Su Lee, et al.
Nanomaterials (Basel, Switzerland)|October 11, 2018
Operation Mechanism of a MoS₂/BP Heterojunction FETSung Kwan Lim, Soo Cheol Kang, Tae Jin Yoo, et al.
Nanomaterials (Basel, Switzerland)|June 24, 2020
Channel Defect Profiling and Passivation for ZnO Thin-Film TransistorsSoo Cheol Kang, So Young Kim, Sang Kyung Lee, et al.
Nanotechnology|April 6, 2013
Ferroelectric polymer-gated graphene memory with high speed conductivity modulationHyeon Jun Hwang, Jin Ho Yang, Young Gon Lee, et al.
Nanotechnology|November 2, 2013
Characteristics of a pressure sensitive touch sensor using a piezoelectric PVDF-TrFE/MoS2 stackWoojin Park, Jin Ho Yang, Chang Goo Kang, et al.
Nanomaterials (Basel, Switzerland)|October 29, 2020
Charging Effect by Fluorine-Treatment and Recess Gate for Enhancement-Mode on AlGaN/GaN High Electron Mobility TransistorsSoo Cheol Kang, Hyun-Wook Jung, Sung-Jae Chang, et al.
ACS Applied Materials & Interfaces|October 5, 2017
Wafer-Scale Integration of Highly Uniform and Scalable MoS<sub>2</sub> TransistorsYonghun Kim, Ah Ra Kim, Guoqing Zhao, et al.
Nanomaterials (Basel, Switzerland)|November 4, 2020
Comprehensive Research of Total Ionizing Dose Effects in GaN-Based MIS-HEMTs Using Extremely Thin Gate Dielectric LayerSung-Jae Chang, Dong-Seok Kim, Tae-Woo Kim, et al.
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