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Soukiassian

Showing results (1-10 of 44) with videos related to

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Physical Review. B, Condensed Matter|October 15, 1995
Identification of surface core-level shift origin for prototypical Cs/Si(100) 2 x 1 system by photoemission EXAFSMangat, Soukiassian
Physical Review. B, Condensed Matter|June 15, 1989
Alkali-metal-promoted oxidation of the Si(100)2 x 1 surface: Coverage dependence and nonlocalityStarnberg, Soukiassian, Hurych
Physical Review. B, Condensed Matter|January 15, 1988
Thermal growth of SiO2-Si interfaces on a Si(111)7 x 7 surface modified by cesiumStarnberg, Soukiassian, Bakshi, et al.
Physical Review. B, Condensed Matter|December 15, 1989
Alkali-metal-induced interface resonant state on a semiconductor surfaceSoukiassian, Kendelewicz, Hurych
Physical Review. B, Condensed Matter|July 15, 1994
Ge(100) 2 x 1 and c(4 x 2) surface reconstructions studied by ab initio total-energy molecular-force calculationsSpiess, Freeman, Soukiassian
Physical Review. B, Condensed Matter|August 15, 1990
Room-temperature nitridation of gallium arsenide using alkali metal and molecular nitrogenSoukiassian, Starnberg, Kendelewicz, et al.
Physical Review. B, Condensed Matter|February 15, 1994
Schottky-barrier and interface formation of Cs/GaSb(110) and Rb/GaSb(110) at room temperatureSchirm, Soukiassian, Mangat, et al.
Physical Review. B, Condensed Matter|May 15, 1995
Direct and Rb-promoted SiOx/ beta -SiC(100) interface formationRiehl-Chudoba, Soukiassian, Jaussaud, et al.
Physical Review Letters|September 8, 2000
Derycke et al. reply:Derycke, Soukiassian, Mayne, et al.
Physical Review. B, Condensed Matter|November 15, 1992
Atomic structure, adsorbate ordering, and mode of growth of the K/Si(100)2 x 1 surfaceSoukiassian, Kubby, Mangat, et al.
Pageof 5

Showing results (1-10 of 44) with videos related to

Sort By:
Pageof 5
Physical Review. B, Condensed Matter|October 15, 1995
Identification of surface core-level shift origin for prototypical Cs/Si(100) 2 x 1 system by photoemission EXAFSMangat, Soukiassian
Physical Review. B, Condensed Matter|June 15, 1989
Alkali-metal-promoted oxidation of the Si(100)2 x 1 surface: Coverage dependence and nonlocalityStarnberg, Soukiassian, Hurych
Physical Review. B, Condensed Matter|January 15, 1988
Thermal growth of SiO2-Si interfaces on a Si(111)7 x 7 surface modified by cesiumStarnberg, Soukiassian, Bakshi, et al.
Physical Review. B, Condensed Matter|December 15, 1989
Alkali-metal-induced interface resonant state on a semiconductor surfaceSoukiassian, Kendelewicz, Hurych
Physical Review. B, Condensed Matter|July 15, 1994
Ge(100) 2 x 1 and c(4 x 2) surface reconstructions studied by ab initio total-energy molecular-force calculationsSpiess, Freeman, Soukiassian
Physical Review. B, Condensed Matter|August 15, 1990
Room-temperature nitridation of gallium arsenide using alkali metal and molecular nitrogenSoukiassian, Starnberg, Kendelewicz, et al.
Physical Review. B, Condensed Matter|February 15, 1994
Schottky-barrier and interface formation of Cs/GaSb(110) and Rb/GaSb(110) at room temperatureSchirm, Soukiassian, Mangat, et al.
Physical Review. B, Condensed Matter|May 15, 1995
Direct and Rb-promoted SiOx/ beta -SiC(100) interface formationRiehl-Chudoba, Soukiassian, Jaussaud, et al.
Physical Review Letters|September 8, 2000
Derycke et al. reply:Derycke, Soukiassian, Mayne, et al.
Physical Review. B, Condensed Matter|November 15, 1992
Atomic structure, adsorbate ordering, and mode of growth of the K/Si(100)2 x 1 surfaceSoukiassian, Kubby, Mangat, et al.
Pageof 5